Abstract:Carbon nitride films were deposited on Co/Ni-covered Si(100) wafers at room temperature using a dc glow discharge plasma beam deposition method. The glow discharge has been carried out in a mixed gas of nitrogen and methane in different relative proportions and has maintained stable in an glow operating pressure around 30Torr. Scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy and Raman spectroscopy were carried out to investigate morphology, composition, structure and crystallinity of the as-deposited films. In scanning electron microscopy images, the as-deposited films consist of crystallites with an average size of about 20–30nm, and an interesting cauliflower structure is found in the center of a prepared sample. The X-ray diffraction results indicate that β- and graphitic-C3N4 crystallites and CNx or carbon nanotubes exist in the as-deposited films. The X-ray photoelectron spectroscopy results show that the [N]/[C] ratios are 0.34–0.46 and the peak shapes and intensities in the N 1s and C 1s regions are similar to those previously reported by our research group using the atom-beam assisted pulsed laser deposition method. The Raman spectra show two separated characteristic bands: a disordered D band (around 1323cm−1) that indicates the presence of C3N4 components, and a graphitic G band (around 1593cm−1). The impacts of the substrate temperatures, nitrogen/methane pressure ratios and Co/Ni layer thicknesses on the properties of the as-deposited films are discussed.

Synthesis and Modification of Beta-C3n4 Materials by Ion-beam Processing

Synthesis of C3N4+ by the Combination of Laser Ablation of Graphite and N2 Molecular Beam

Carbon Nitride Films Synthesized By Combined Ion-Beam And Laser-Ablation Processing

Investigation of carbon nitride films by cathodic arc evaporation

Characterization and modification of carbon nitride films deposited by laser ablation under low energy ion‐beam bombardment

Synthesis of Carbon Nitride Films by Arc-Heated Atomic Nitrogen Beams Assisted Pulsed Laser Ablation

Electronic and Mechanical-Properties of Carbon Nitride Films Prepared by Laser-Ablation Graphite under Nitrogen Ion-Beam Bombardment

Characterization of Carbon Nitride Films Modified by Low Energy Ion-Beam Bombardment

Carbon Nitride Films Synthesized By Nh3-Ion-Beam-Assisted Deposition

Ion-beam-assisted Deposition of CNx Films

Formation of Β-C3n4 Phase in C-N Films Deposited by Reactive Ionized Cluster Beam Method

Raman Spectra Of Nanocrystalline Carbon Nitride Synthesized On Cobalt-Covered Substrate By Nitrogen-Atom-Beam-Assisted Pulsed Laser Ablation

Experimental Studies of Superhard Materials Carbon Nitride Cnx Prepared by Ion-Beam Synthesis Method

Investigations on Structural Properties of Carbon Nitride Films Synthesized by Reactive Ionized Cluster Beam Deposition

Structure and properties of carbon nitride films synthesized by low energy ion bombardment

Carbon nitride films synthesized with an improved reactive ionized cluster beam system

Synthesis of Nanocrystalline Carbon Nitride Films by Glow Discharge Plasma Beam Deposition

Experimental Realization of the Covalent Solid Carbon Nitride

Crystalline Carbon Nitride Film Synthesized by Ion Beam Assisted Magnetron Sputtering and Thermal Annealing in Nitrogen Gas

Synthesis of Carbon Nitride Nanocrystals on Co/Ni-covered Substrate by Nitrogen-Atom-beam-assisted Pulsed Laser Ablation

Synthesis of Crystalline C3N4 by MPCVD