Preparation of Perovskite Conductive Lanio3 Films by Metalorganic Decomposition

AD Li,CZ Ge,P Lu,NB Ming

DOI: https://doi.org/10.1063/1.115930

IF: 4

1996-01-01

Applied Physics Letters

Abstract:Perovskite conductive LaNiO3 films, 250 nm thick, were prepared by metalorganic decomposition. Rutherford backscattering spectrometry was used to determine the film thickness and composition. The x-ray diffraction patterns of LaNiO3 films indicated that the lowest temperature for crystallization is about 530 °C. The measurement of resistivity as a function of annealing temperatures showed that the good metallic conductive LaNiO3 films could be obtained at 550 °C. The films with the lowest resistivity (4.0×10−4 Ω cm) were obtained on quartz by annealing in oxygen at 700 °C.