Abstract:We discuss the SiGe island co-sputtering deposition on a microcrystalline silicon (μc-Si) buffer layer and the secondary island growth based on this pre-SiGe island layer. The growth phenomenon of SiGe islands on crystalline silicon (c-Si) is also investigated for comparison. The pre-SiGe layer grown on μc-Si exhibits a mixed-phase structure, including SiGe islands and amorphous SiGe (a-SiGe) alloy, while the layer deposited on c-Si shows a single-phase island structure. The preferential growth and Ostwald ripening growth are shown to be the secondary growth mechanism of SiGe islands on μc-Si and c-Si, respectively. This difference may result from the effect of amorphous phase Si (AP-Si) in μc-Si on the island growth. In addition, the Si-Ge intermixing behavior of the secondary-grown islands on μc-Si is interpreted by constructing the model of lateral atomic migration, while this behavior on c-Si is ascribed to traditional uphill atomic diffusion. It is found that the aspect ratios of the preferential-grown super islands are higher than those of the Ostwald-ripening ones. The lower lateral growth rate of super islands due to the lower surface energy of AP-Si on the μc-Si buffer layer for the non-wetting of Ge at 700 °C and the stronger Si-Ge intermixing effect at 730 °C may be responsible for this aspect ratio difference.

Effects of Si Spacer-Layer on the Structure of Ge/Si Quantum Dots Bilayers Grown by Ion Beam Sputtering

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Effect of Interlayer Strain Interaction on the Island Composition and Ordering in Ge/Si(001) Island Superlattices

Effect of Inter-Layer Strain Interaction on the Optical Properties of Ge/Si(001) Island Multi-Layers

Ni induced lateral crystallization of high density Ge-dots/Si heterostructures

Microstructures of Ge-dots/Si Multilayered Structures Fabricated by Ni-induced Lateral Crystallization

Optical properties of Ge/Si quantum dot superlattices

A Two-Stage Molecular Beam Epitaxial Growth Method to Fabricate Small and Uniform Ge Quantum Dots on Si(1 0 0)

Factors Influencing Epitaxial Growth of Three-Dimensional Ge Quantum Dot Crystals on Pit-Patterned Si Substrate.

Annealing Effects on the Microstructure of Ge/Si(001) Quantum Dots

Study of Si and Ge growth on Si(100) surface

Study on crystal growth of Ge/Si quantum dots at different Ge deposition by using magnetron sputtering technique

High-density Ge Dots Grown on Si Substrate by Modified S-K Method

Deposition of high-density Ge quantum dots on ultra-thin SiO2/Si(111) film surface

Deposition of high-density Ge quantum dots on ultra-thin SiO2/Si(1 1 1) film surface

A two-stage molecular beam epitaxial growth method to fabricate small and uniform Ge quantum dots on Si(100)

Secondary growth mechanism of SiGe islands deposited on a mixed-phase microcrystalline Si by ion beam co-sputtering

Study of Si Caplayer Influence on Microstructure of Ge/Si Quantum Dots by Grazing Incident X-Ray Diffraction