Abstract:SiC polytypes have been studied for decades, both experimentally and with atomistic simulations, yet no consensus has been reached on the factors that determine their stability and growth. Proposed governing factors are temperature-dependent differences in the bulk energy, biaxial strain induced through point defects, and surface properties. In this work, we investigate the thermodynamic stability of the 3C, 2H, 4H, and 6H polytypes with density functional theory (DFT) calculations. The small differences of the bulk energies between the polytypes can lead to intricate changes in their energetic ordering depending on the computational method. Therefore, we employ and compare various DFT codes, i.e., vasp , cp2k , and fhi-aims ; exchange-correlation functionals, i.e., LDA, PBE, PBEsol, PW91, HSE06, SCAN, and RTPSS; and nine different van der Waals (vdW) corrections. At T=0 K, 4H-SiC is marginally more stable than 3C-SiC, and the stability further increases with temperature by including entropic effects from lattice vibrations. Neither the most advanced vdW corrections nor strain on the lattice have a significant effect on the relative polytype stability. We further investigate the energies of the (0001) polytype surfaces that are commonly exposed during epitaxial growth. For Si-terminated surfaces, we find 3C-SiC to be significantly more stable than 4H-SiC. We conclude that the difference in surface energy is likely the driving force for 3C-nucleation, whereas the difference in the bulk thermodynamic stability slightly favors the 4H and 6H polytypes. In order to describe the polytype stability during crystal growth correctly, it is thus crucial to take into account both of these effects. https://doi.org/10.1103/PhysRevB.106.075201 ©2022 American Physical Society

Step Flow and Polytype Transformation in Growth of 4H-Sic Crystals

Formation Mechanism of Two Types of Polytype Transformation in off-axis 4H-SiC Boules

Role of the Growth Facet on the Generation and Expansion of Stacking Faults in PVT-Grown N-Type 4H-Sic Single-Crystal Boules

Growth of Single Crystalline 4H-Sic Film by Pyrogenation of PS/OCS/Si(111) Nappe in Low-pressure Ambient Ar and Mechanism of Suppressing Interfacial Dislocations

Analysis of polytype stability in PVT grown silicon carbide single crystal using competitive lattice model Monte Carlo simulations

Synchrotron X-ray Topography Studies of Dislocation Behavior During Early Stages of PVT Growth of 4H-SiC Crystals

Surface Defects in 4H-Sic: Properties, Characterizations and Passivation Schemes

Effects of Solution Height and Crystal Rotation on the Solution Flow Behavior in the Top-Seeded Solution Growth of SiC Single Crystals

Effect of Subsurface Damages in Seed Crystals on the Crystal Quality of 4H-Sic Single Crystals Grown by the PVT Technology

Distribution of the Electrical Resistivity of a N-Type 4H-Sic Crystal

Electronic and Optical Properties of Threading Dislocations in n-Type 4H-SiC

Distribution of Basal Plane Dislocations in 4-Degree Off-Axis 4H-Sic Single Crystals

Doping-dependent Nucleation of Basal Plane Dislocations in 4H-Sic

Anisotropic Deformation of 4H-Sic Wafers: Insights from Nanoindentation Tests

Polytype Stabilization of High-purity Semi-insulating 4H-SiC Crystal via the PVT Method

Effect of Growth Rate on Morphology Evolution of 4H-Sic Thick Homoepitaxial Layers

Crystal growth of ferroelectric PbTiO 3 nanocrystals on silicon substrate via intermediates

Polytypic transformation behavior from 4H-SiC to 3C-SiC during high-speed scratching of single crystalline silicon carbide

Effects of thermal, elastic, and surface properties on the stability of SiC polytypes

Characterization and formation mechanism of short step-bunching defects on 4H-SiC thick homoepitaxial films

Nucleation of Threading Dislocations in 4H-SiC at Early Physical-Vapor-Transport Growth Stage