Abstract:Yttria-stabilized zirconia (YSZ) thin films on polycrystalline substrates were grown by cold-wall aerosol-assisted metallorganic chemical vapor deposition (MOCVD) at the temperatures of 673-1233 K using metal beta-diketonate chelates as precursors. Thin uniform films with amorphous structure were obtained below 673 K; when the deposition temperature increases to 773-1023 K, YSZ films appear to be a mixture of cubic and monoclinic phases; single cubic YSZ phase can be obtained at deposition temperature above 1023 K. The Y/Zr atom ratio estimated from the corresponding X-ray photoelectron spectroscopy peaks is less than the feed ratio, which can be interpreted by different transfer resistance of Y and Zr intermediates diffusing to the substrate surface. The films obtained at 673-1023 K possess a layer structure originated from low mobility of the absorbed species. Along with the increase of the deposition temperature, the grains become mature and larger, and then unite with each other to form a continuous columnar film. Mass transport dominates the growth process within lower temperatures, and homogeneous reaction will interrupt the growth at increasingly high temperatures. Growth rate expression with respect to temperature, pressure, gas flow rate, and metal concentration of precursor solutions was deduced assuming deposition of mass-transport limited mechanism, which is consistent with the experimental results. (c) 2005 The Electrochemical Society. All rights reserved.

Development of Mid-Frequency AC Reactive Magnetron Sputtering for Fast Deposition of Y2O3 Buffer Layers

Fabrication and Characterization of Y2O3 Stabilized ZrO2 Films Deposited with Aerosol-Assisted MOCVD

Deposition of Y2O3 stabilized ZrO2 thin films from Zr(DPM)4 and Y(DPM)3 by aerosol-assisted MOCVD

Formation and Rate Processes of Y[sub 2]o[sub 3] Stabilized ZrO[sub 2] Thin Films from Zr(DPM)[sub 4] and Y(DPM)[sub 3] by Cold-Wall Aerosol-Assisted MOCVD

Formation and Rate Processes of Y2o3 Stabilized Zro2 Thin Films from Zr(Dpm)(4) and Y(Dpm)(3) by Cold-Wall Aerosol-Assisted Mocvd

Synthesis of YSZ film by solid single source PE-MOCVD method and characterization

Batch Production of Large-Area Double-Sided Yba2cu3o7-Delta Thin Films by Dc Magnetron Sputtering

Epitaxial Growth and Characterization of Dual-Sided Y2O3 Buffer Layer for Superconducting Coated Conductors

Epitaxial growth of Gd 2 Zr 2 O 7 /Y 2 O 3 buffer layers for YBa 2 Cu 3 O 7− δ coated conductors

Epitaxial Growth of LaMnO3 Buffer Layer by Magnetron Sputtering Method

A Method to Fabricate Biaxially Textured MgO Buffer Layer for HTS Coated Conductor

Surface Morphology Evolution of CeO2/YSZ (001) Buffer Layers Fabricated Via Magnetron Sputtering

Resputtering effect during MgO buffer layer deposition by magnetron sputtering for superconducting coated conductors

Aerosol-assisted MOCVD Deposition of YDC Thin Films on (nio + YDC) Substrates

Preparation of Yba2cu3o7-X Superconducting Thin-Films over Large Area Substrates

A Direct Laser Sintering Approach for the Electrophoretic Deposition Overlay of Yttria-Stabilized Zirconia on the Surface of a Thermal Barrier Coating System

Thickness Effect of Gd2Zr2O7 Buffer Layer on Performance of YBa2Cu3O7−δ Coated Conductors

Surface Structure and Transport Properties of Yba2cu3o7-Delta Using La2/3ca1/3mno3 As Buffer

Advance in Long-Length REBCO Coated Conductors Prepared by Reel-to-Reel Metalorganic Solution and Ion-Beam-Assisted Deposition

Preparation of YBa2Cu3O7−δ Thin Films by Magnetron Sputtering with I N S I T U Plasma Oxidation

Preparation of NiO Buffer Layer by Direct Oxygenation of Ni Tape