Abstract:Indium and nitrogen co-doped ZnO thin films [ZnO: (In, N)] were prepared on quartz glass substrate by radio frequency magnetron sputtering combined with ion implantation technique. By optimizing the annealing temperature, a repeatable p-type ZnO:(In, N) thin film with the hole concentration about 10(16) cm(-3) was successfully achieved. Using the Hall effect measurements, the n -> p -> n electrical transition phenomenon of the films with annealing temperature was observed. Then the effects of doped impurities and intrinsic defects on the structure and p-type conductivity of the films were investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy and photoluminescence (PL) spectroscopy. It was found that the difference of N-related acceptor defects concentration between p-type and n-type ZnO is not prominent. Nevertheless, the content of intrinsic zinc interstitial (Zn-i) donor defects in p-type ZnO were less than that of n-type one, the intrinsic oxygen interstitial (O-i) and zinc vacancy (V-Zn) acceptor defects were relatively abundant. The conclusion can be drawn that besides the N-related acceptor defects (N-O, In-Zn-nN(O)), the intrinsic defects (V-Zn, O-i, Zn-i) in the film also play a crucial role in realizing the p-type conductivity. Therefore, how to control the intrinsic defects in ZnO is an important means to realize the p-type transition and to improve p-type conductivity stability of ZnO thin film.

P-Type Conductivity Control of Heteroepitaxially Grown ZnO Films by N and Te Codoping and Thermal Annealing

Hydrogen‐assisted Nitrogen‐acceptor Doping in ZnO

Roles of Hydrogen and Nitrogen in P-Type Doping of ZnO

Investigation of the Crystallinity of N and Te Codoped Zn-polar ZnO Films Grown by Plasma-Assisted Molecular-Beam Epitaxy

High-Quality P-Type ZnO Films Grown by Co-Doping of N and Te on Zn-Face ZnO Substrates

Achieve p -type conduction in N-doped and (Al,N)-codoped ZnO thin films by oxidative annealing zinc nitride precursors

Control of Conductivity Type in Undoped Zno Thin Films Grown by Metalorganic Vapor Phase Epitaxy

P-Type Conductivity and Stability of Ag–N Codoped ZnO Thin Films

Formation Mechanisms of Electrical Conductivity and Optical Properties of ZnO：N Film Produced by Annealing Treatment

p-Type conduction in Al–N co-doped ZnO films

Control of Conduction Type in Al- and N-codoped ZnO Thin Films

Effect of Intrinsic Defects on P-Type Conductivity of ZnO:(In, N) Thin Films

Effects of (P, N) Dual Acceptor Doping on Band Gap and P-Type Conduction Behavior of ZnO Films

First-Principles Study of P-Type Zno by Te-N Codoping

Effect of Annealing on the Formation of P-Type Conductivity in Nano-Zn0.92mn0.08o:N Films

Mechanism of Na-doped P-Type ZnO Films: Suppressing Na Interstitials by Codoping with H and Na of Appropriate Concentrations

Structural and electrical properties of nitrogen and aluminum codoped p-type ZnO films

Control of P- and N-Type Conduction in Zno Films and Properties of Zno P-N Homojunctions

Properties of N-doped ZnO thin films in annealing process

P-Type Doping of ZnO∶N Thin Fims by Alternating the Growth Atmosphere

Preparation and Characteristic of P-Type ZnO Films by Al–N Codoping Technique