P-type Ohmic contact to MoS2 via binary compound electrodes
Liang Hu,Hu Zhang,Li Huang,Yinti Ren,Yuantao Chen,Jianglong Wang,Penglai Gong,Xingqiang Shi
DOI: https://doi.org/10.1039/d2tc05088a
IF: 6.4
2023-02-03
Journal of Materials Chemistry C
Abstract:Electric contacts to two-dimensional (2D) semiconductor, e.g., MoS2, with both n- and p-types are important for complementary metal-oxide-semiconductor logical circuitry. Previous studies reported the n-type or ambipolar contact to MoS2 with elemental metal electrodes of different work functions. Here, via first-principles density-functional theory calculations, we report that both n- and p-types Ohmic contact to MoS2 can be obtained via the different surfaces of a same material, namely, the binary compound covellite (CuS). The weak metallicity of CuS is helpful to suppress the metal-induced gap states and hence suppress the Fermi-level pinning effect. More importantly, the work functions of the puckered CuS surface [P(Cu) and P(S)] and the flat CuS surface [F(Cu-S)] varies from 3.8 eV to 5.8 eV. The higher work function F(Cu-S) surface forms a p-type contact to MoS2, and, the p-type Schottky barrier height (SBH) can be reduced with the increasing layer number of MoS2. The origin of p-type SBH reduction can be attributed to the quasi-bonding at the F(Cu-S)/MoS2 interface and between MoS2 layers, which synergistically shift-up the valence band edge. Also, as a result of large work function variation and interface quasi-bonding, the p-type Ohmic contact to monolayer MoS2 can be obtained via the P(S) surface and the P(Cu)/monolayer MoS2 junction forms a n-type Ohmic contact. The widely tunable SBH and contact types of the binary compound CuS/MoS2 junctions, in addition to the recent experimental demonstration of CuS as good flexible and transparent electrodes, make them promising for high-efficiency electronic and optoelectronic devices.
materials science, multidisciplinary,physics, applied