Abstract:One of the most appealing aspects of the two-dimensional transition-metal dichalcogenides (2D-TMDs) is that they have a variety of crystal types, which can exist in three different atomic lattices, 2H, 1 T and 1 T', and can therefore exhibit diverse electronic properties. In addition, 2D-TMD heterostructures with distinctive features can be generated by combining two monolayers either vertically or laterally (in-plane). In this work, we used first-principles calculations to explore the structural and electronic properties of the H-phase MoTe2 monolayer, the T'-phase WTe2 monolayer, and their in-plane heterostructures (H-MoTe2/T'-WTe2). The H-phase MoTe2 monolayer has a band structure with a direct band gap, whereas the 1 T'-WTe2 monolayer is projected to be a Weyl semimetal based on our findings. We constructed a series of five relatively stable in-plane H-MoTe2/T'-WTe2 heterostructures with metal–semiconductor and studied their electronic properties. The band structures of these in-plane heterostructures were shown to be strongly related to the relative orientations of the monolayers at the interface. In particular, the band gaps of the heterostructures joined along the armchair direction were found to be smaller than 0.1 eV. By sewing the MoTe2 and WTe2 monolayers along the zigzag direction, two relatively stable structures were created, with according to the band structure analysis, exhibited metallic characteristics. Surprisingly, band inversion appeared near the Fermi level due to boundary effects. Therefore, topological properties may be present in such in-plane heterostructures. Moreover, some of these in-plane H-MoTe2/T'-WTe2 heterostructures have effective Schottky barrier heights smaller than 0.25 eV for holes, and could thus be used to construct field effect transistors (FETs). We also found that the effective Schottky barrier height was largely determined by the interfacial bonding environment, the external electric field, and uniaxial strains. Our findings enrich the diversity of the 2D-TMDs heterostructures and point to a viable approach for the design of high-performance electronic and optoelectronic devices.

Correlating the Electronic Structures of Metallic/semiconducting MoTe2 Interface to Its Atomic Structures

Topological Phase Transition Between Distinct Weyl Semimetal States in MoTe2

Phase Transition and Electronic Structure Evolution of MoTe2 Induced by W Substitution

Millimeter-Scale Single-Crystalline Semiconducting MoTe2 Via Solid-to-Solid Phase Transformation.

Engineering the Structural and Electronic Phases of MoTe2 Through W Substitution

Heterocontact-Triggered 1H to 1T' Phase Transition in CVD-Grown Monolayer MoTe2: Implications for Low Contact Resistance Electronic Devices

Atomistic Observation of the Local Phase Transition in MoTe2 for Application in Homojunction Photodetectors.

Unraveling the multistage phase transformations in monolayer Mo-Te compounds

Polar and phase domain walls with conducting interfacial states in a Weyl semimetal MoTe2

Direct Measurement of the Electronic Structure and band gap nature of atomic-layer-thick 2H-MoTe2

The Role of Interfacial Electronic Properties on Phonon Transport in Two-Dimensional MoS2 on Metal Substrates.

Interfacial properties of In-plane monolayer 2H-MoTe2/1T'-WTe2 heterostructures

The structural phases and vibrational properties of Mo1-xWxTe2 alloys

Structure and Dynamics of the Electronic Hetero-Interfaces in MoS2 by First-Principles Simulations.

First-principles investigations of the controllable electronic properties and contact types of type-II MoTe2/MoS2 van der Waals heterostructure

Metal Contacts On Physical Vapor Deposited Monolayer Mos

An Unexpected Interfacial Mo-rich Phase in 2D Molybdenum Disulfide and 3D Gold Heterojunctions.

Robust transport of charge carriers in in-plane 1T′-2H MoTe2 homojunctions with ohmic contact

Semiconductor-semimetal Transition of MoTe2 Monolayer Modulated by Charge-Injection and Strain Engineering

Atomic Step-Promoted Growth and Interfacial Coupling in MoS2/TMO Heterostructures

Visualizing Spatial Evolution of Electron-Correlated Interface in Two-Dimensional Heterostructures