Abstract:The effects of the Pt diffusion barrier layer on the interface diffusion and reaction, crystallization, dielectric and ferroelectric properties of the PZT/Si(111) sample have been studied using XPS, AES and XRD techniques. The results indicate that the Pt diffusion barrier layer between the PZT layer and the Si substrate prohibits the formation of TiCx, TiSix and SiO2 species in the PZT layer. The Pt barrier layer also completly interrupts the diffusion of Si from the Si substrate into the PZT layer and impedes the diffusion of oxygen from air to the Si substrate greatly. Although the Pt layer can not prevent completely the diffusion and reaction between oxygen and silicon, it can prevent the formation of a stable SiO2 interface layer on the interface of PZT/Si. The Pt layer reacts with silicon to form PtSix species on the interface of Pt/Si, which can intensify the chemical binding strength between the Pt layer and the Si substrate. To play a good role as a diffusion barrier layer, the Pt barrier layer must be not thinner than 140 nm. The existence of the Pt layer not only promotes the crystallization of PZT layer to form a perovskite phase but also improves dielectric and ferroelectric performances of the PZT layer.

The improvement of pyroelectric properties of PZT thick films on Si substrate by TiOx barrier layer

Preparation of PZT Thick Film by a High Speed Sol-gel Method

Effects of Pt Diffusion Barrier Layer on the Interface Reaction and Electric Properties of PZT Film/si ( 111 ) Sample

Enhanced Performance of Pb0.8la0.1ca0.1ti0.975o3/Pb(Nb0.01zr0.2ti0.8)O-3 Multilayer Thin Films for Pyroelectric Applications

Properties of multi-layered PZT films

Preparation of Si-based PZT pyroelectric thick film infrared detector

Influence of doping and buffer layers on Pb(Zr,Ti)O3 thin films derived from inorganic zirconium precursor

Effects of Thickness of the Thermal Insulation Layer on the Properties of PbTiO3 Thin Films

Thickness-dependent Electrical Properties of Sol–gel Derived Pb(Zr 0.52 Ti 0.48 )O 3 Thick Films Using PbTiO 3 Buffer Layers

Effects of Pb5Ge3O11on Pyroelectric Lead–zirconate–titanate Thick Films Deposited on Silicon Substrate by Electrophoresis Deposition

Effects of Bi2O3-Li2CO3 additions on dielectric and pyroelectric properties of Mn doped Pb(Zr 0.9Ti0.1)O3 thick films

Microstructure and Electrical Properties of Ferroelectric Pb(Zr0.53Ti0.47)O3films on Si with TiO2buffer Layers

Great Enhancement of Pyroelectric Properties for Ba0.65Sr0.35TiO3 Films on Pt–Si Substrates by Inserting a Self-Buffered Layer

Improved electrical properties in PZT/PZ thin films by adjusting annealing temperature

Study on the oxidation reaction on the interface of PZT/Si film

Fabrication of Pzt Thin Films with Tiox Buffer Layers by Rf Magnetron Sputtering

INVESTIGATION ON Pb(Zr_(0.3)Ti_(0.7))O_3 PYROELECTRIC THIN FILM MATERIALS

Preparation and Characterization of Lead Zirconate Titanate Thin Films Grown by RF Magnetron Sputtering for Pyroelectric Infrared Detector Arrays

Properties of PbZr<sub>x</sub>Ti<sub>1−x</sub>O<sub>3</sub>/CeO<sub>2</sub>/SiO<sub>2</sub>/Si structure

Preparation and characterization of lead zirconate titanate thick films prepared by chemical solution deposition for MEMS applications

Manufacture of large area porous PZT thick films and pyroelectric detectors based on screen-printing technology