Simulation Design of a High Q Tunable Capacitor with Comb Structure

Yan-ning LI,Yong RUAN,Zheng YOU,Hong-wei XU,Yu-gang LI
DOI: https://doi.org/10.3969/j.issn.1000-1093.2013.10.007
2013-01-01
Abstract:A design scheme of micro-electro-mechanical system (MEMS) tunable capacitor with comb structure is proposed. Simulation design was implemented in terms of structure, electrical properties and process. FEM simulation indicates that, for the tunable capacitor, the capacitance tuning ratio is 3.45:1, the tuning range is 88.16~392.19 fF at 67 V drive voltage, the resonant frequency is 36 GHz, Q factor is 223 (1 GHz), and the reflection attenuation is 0.00225 dB, insertion loss is 42.75 dB, respectively. Compared with other tunable capacitors, the design has high Q, high adjustable capacitance rate and simple process.
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