Abstract:The microstructure and electrical–optical properties of Al-doped ZnO (AZO) films have been studied as a function of H2 flux in the magnetron sputtering process at 150 °C and postannealing temperature in vacuum. As H2 flux increases in the sputtering gas, the AZO films deposited have a (002) preferred orientation rather than the mixed (100) and (002) orientations, the grain size shows a tendency to first increase then decrease, and (002) diffraction peak position is inclined to shift to higher angles first then to lower angles. The resistivity of the films first decreases then increases with H2 flux, and the lowest resistivity of 4.02 × 10−4 Ω cm is obtained at a H2 flux of 10 sccm. The average transmittance in the visible region shows little dependence on H2 flux. As a whole, the AZO films with higher values of figure of merit are obtained when the H2 flux is in the range of 6–12 sccm. The AZO films deposited in Ar and Ar + H2 exhibit different annealing behaviors. For the AZO film deposited in Ar, the grain size gradually increases, the stresses are relaxed, the resistivity first decreases then increases, and the average transmittance in the visible region is unchanged initially then somewhat decreased as annealing temperature is increased. The optimum annealing temperature for improving properties of AZO films deposited in Ar is 300 °C. For the AZO films deposited in Ar + H2, annealing does not significantly change the microstructure but increases the resistivity of the films; the average transmittance in the visible region remains unchanged initially but greatly reduced with further increase in annealing temperature. The carrier transport in the as-deposited and annealed films appears to be controlled by a mechanism of grain boundary scattering, and the value of Eg increases with the increase in carrier concentration due to Burstein–Moss effect.

Modification of Structure and Properties of AZO Thin Film by Introducing H2 in Sputtering Atmosphere at Low Substrate Temperature

Deposition and Characterization of AZO Thin Films on Flexible Glass Substrates Using DC Magnetron Sputtering Technique

Characteristics of Al-doped ZnO Thin Films Prepared in Ar + H2 Atmosphere and Their Vacuum Annealing Behavior

Influence of Hydrogen on Al-doped ZnO Thin Films in the Process of Deposition and Annealing

Effects of substrate temperature on the efficiency of hydrogen incorporation on the properties of Al-doped ZnO films

Effects of Hydrogen Flux on Aluminum Doped Zinc Thin Films by Pulsed Magnetron Sputtering

Highly conductive and transparent Al-doped ZnO films on glass substrate via incorporating hydrogen at low substrate temperatures

Modulation of Optical and Electrical Properties of Sputtering-Derived Amorphous Ingazno Thin Films by Oxygen Partial Pressure

Improvement of Transparent Conductive Properties of GZO/Cu/GZO Tri-Layer Films by Introducing H2 into Sputtering Atmosphere

Ellipsometric Study on Optical Properties of Hydrogen Plasma-Treated Aluminum-Doped ZnO Thin Film

Stability of Azo Thin Films under the Environment of Hydrogen Plasma

The properties of surface textured ZnO:Al films grown in hydrogen atmosphere

Sputtering deposition of transparent conductive F-doped SnO2 (FTO) thin films in hydrogen-containing atmosphere

Effects of oxygen ambient on the structural, morphological, optical and electrical properties of AZO/Ag/AZO transparent electrodes

Tailoring the Morphology, Optical and Electrical Properties of DC-sputtered ZnO:Al Films by Post Thermal and Plasma Treatments

Tailoring of Optical and Electrical Properties of Transparent and Conductive Al-doped ZnO Films by Adjustment of Al Concentration

Properties of Hydorogenated Al-Doped ZnO Films by Multi-Step Texture

Study on Aluminum Concentration on Optical and Electrical Properties of AZO Thin Films Fabricated by Ultrasonic Spray Pyrolysis

Highly Conductive AZO Thin Films Obtained by Rationally Optimizing Substrate Temperature and Oxygen Partial Pressure

Studies on Morphology, Electrical and Optical Characteristics of Al-doped ZnO Thin Films Grown by Atomic Layer Deposition

Hydrogen incorporation induced metal-semiconductor transition in ZnO:H thin films sputtered at room temperature