Influence of the Hydrogen Implantation Power Density on Ion Cutting of Ge

Yujiao Ruan,Wang Lin,Songyan Chen,Cheng Li,Hongkai Lai,Wei Huang,Jun Li
DOI: https://doi.org/10.1116/1.4817756
2013-01-01
Abstract:In this work, surface morphologies, strain status, and defect evolution were investigated for Ge wafers after hydrogen implantation with different implantation power densities. Hydrogen implantation generates strain in the Ge lattice at lower implantation power densities, and this strain is crucial for a successful ion cut. At higher implantation power densities, the strain is relaxed and mosaic structures are seen in the as-implanted samples, where platelet defects grow, propagate, and coalesce owing to the self-annealing effect during hydrogen implantation. This defect evolution behavior results in either no blistering or formation of discrete blisters after annealing of the implanted Ge samples, rather than the desired ion cut.
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