Interface Characteristics of Different Bonded Structures Fabricated by Low-Temperature A-Ge Wafer Bonding and the Application of Wafer-Bonded Ge/Si Photoelectric Device
Shaoying Ke,Yujie Ye,Jinyong Wu,Yujiao Ruan,Xiaoying Zhang,Wei Huang,Jianyuan Wang,Jianfang Xu,Cheng Li,Songyan Chen
DOI: https://doi.org/10.1007/s10853-018-3015-8
IF: 4.5
2018-01-01
Journal of Materials Science
Abstract:We report the interface characteristics of Si/Si, Si/SiO 2 , SiO 2 /SiO 2 , Ge/Si, Ge/Ge, and Ge/SiO 2 bonded wafers based on an amorphous germanium (a-Ge) intermediate layer. The crystallization of a-Ge and the atom migration mechanism at different bonded structures are very different. The a-Ge turns into polycrystalline Ge (poly-Ge) at Si/Si bonded interface, while it exhibits amorphous phase at Si/SiO 2 and SiO 2 /SiO 2 interfaces after post-annealing. This is due to the change of the stress field when SiO 2 is introduced. Thanks to the crystallization of a-Ge, serious atom migration appears at Si/Si bonded interface, leading to the decomposition of the interface oxide layer formed by the hydrophilic reaction. Interestingly, the a-Ge at Ge/Si, Ge/Ge, and Ge/SiO 2 interface becomes single-crystal Ge after post-annealing. The a-Ge crystallization starts from a-Ge/Ge interface. Similarly, the interface Ge oxide layer also decomposes after the crystallization of a-Ge. This results from the atom redistribution triggered by Ge-induced crystallization under high thermal stress. More importantly, the threading dislocations are not observed at Ge/Si and Ge/SiO 2 interface. The Si/Si, Si/SiO 2 , SiO 2 /SiO 2 , and Ge/SiO 2 bonded interface is demonstrated to be bubble-free. The transferring of the interface by-products (H 2 O and H 2 ) by SiO 2 and poly-Ge can be responsible for this phenomenon. Finally, a wafer-bonded Ge/Si heterojunction photodiode is fabricated to verify the application of a-Ge wafer bonding technique in photoelectric devices.