Abstract:Surface roughening associated with strain relaxation of Si1-xGex films grown epitaxially on (100) Si substrates has been investigated using transmission electron microscopy, atomic force microscopy and x-ray diffraction. Epitaxial films 100 Å in thickness and containing 18% Ge, which are subcritical with respect to the formation of misfit dislocations, show strain relaxation through surface roughening on annealing at 700 °C. Enhanced surface grooves aligned along <100> directions are observed in films annealed at 850 °C. Strain relaxation as measured by x-ray diffraction is significantly greater at the higher temperature. Prolonged anneals at 850 °C also result in islanding. The surface roughening processes have also been studied in subcritical films with 15% Ge at 900 °C. These films also show enhanced grooving aligned along <100> directions. These observations are consistent with an anisotropic elastic analysis which indicates that grooving should occur preferentially along <100> directions. Intermixing effects in these samples have also been investigated through depth profiling using Auger Electron Spectroscopy. In addition to the above subcritical films, other films with 18% and 22% Ge and supercritical thicknesses have also been studied. For these films, surface grooving is observed along <110> directions, which suggests that these grooves are related to the formation of misfit dislocation networks. The role of these surface roughening processes in the nucleation of dislocations has also been explored.

Strain Evolution of SiGe-on-insulator Fabricated by Germanium Condensation Method with Over-Oxidation

Strain Evolution in SiGe-on-insulator Fabricated by a Modified Germanium Condensation Technique with Gradually Reduced Condensation Temperature

Strain Relaxation in Ultrathin SGOI Substrates Fabricated by Multistep Ge Condensation Method

Fabrication and Mechanism of Relaxed Sige-On-Insulator by Modified Ge Condensation

Strain Evolution of Ge on Insulator Formed by Rapid Melting Growth

Non-homogeneous SiGe-on-insulator Formed by Germanium Condensation Process

Mechanism in SiGe-on-Insulator Fabricated by Modified Ge-Condensation Technique

Strain relaxation in SiGe layer during wet oxidation process

Strain Engineering for Germanium-on-Insulator Mobility Enhancement with Phase Change Liner Stressors*

Fabrication of Strain Relaxed Silicon-Germanium-on-Insulator (Si 0.35 Ge 0.65 OI) Wafers using Cyclical Thermal Oxidation and Annealing

Lateral Ge Segregation and Strain Evolution in SiGe Alloys During the Formation of Nickel Germano-Silicide on a Relaxed Si0.73Ge0.27 Epilayer

Fabrication of a polycrystalline SiGe- and Ge-on-insulator by Ge condensation of amorphous SiGe on a SiO<sub>2</sub>/Si substrate

Solid Phase Epitaxy During Ge Condensation from Amorphous SiGe Layer on Silicon-on-insulator Substrate

Thermal Annealing Effects on a Compositionally Graded SiGe Layer Fabricated by Oxidizing a Strained SiGe Layer

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Fabrication of a Polycrystalline SiGe- and Ge-on-insulator by Ge Condensation of Amorphous SiGe on a SiO2/Si Substrate

Sigeo Layer Formation Mechanism at the Sige/Oxide Interfaces During Ge Condensation

Oxidation Behavior of Strained Sige Layer on Silicon Substrate in Both Dry and Wet Ambient

Strain Evolution In Coherent Ge/Si Islands

Strain-induced abnormal Ge/Si inter-diffusion during hetero-epitaxy process

Strain Relaxation in Heteroepitaxial Si<sub>1-x</sub>Ge<sub>x</sub> Films via Surface Roughening Processes