Abstract:Direct epitaxial growth of germanium (Ge) film on silicon (Si) substrate (GOSS) holds great potential in micro-electronics and optoelectronics. However, due to the 4.2% lattice mismatch between Si and Ge, it is difficult to directly obtain high quality Ge by epitaxy on Si substrate. Laser recrystallization technology provides a simple, efficient and low-cost way to improve the crystal quality of epitaxial Ge film grown on Si substrate. This technology is essentially a process of thermally induced phase transformation. By controlling the laser process parameters, epitaxial film of a certain thickness is melted, so that lattice rearrangement and recrystallization are achieved, and high-quality thin Ge/Si can be prepared. Laser recrystallization is a high temperature thermal process, and Si–Ge interdiffusion may detrimentally occur. In this paper, the mechanism of Si–Ge interdiffusion is discussed. Based on Fick's law of diffusion, a numerical model for Si–Ge interdiffusion of GOSS is established. On this basis, the process simulation of thermal annealing and laser recrystallization Si–Ge interdiffusion is carried out by Sentaurus Process simulation. The results show that compared with the traditional thermal annealing, the Si–Ge interdiffusion of Ge on Si almost does not occur in the process of laser recrystallization. By reasonably controlling the process parameters of laser recrystallization, the thin Ge film near the Si–Ge interface does not melt, which can not only improve the crystal quality of Ge epitaxial layer, but also effectively avoid the Si–Ge interdiffusion in the process of laser recrystallization. Through this research, we have aimed at predicting and control the Si–Ge interdiffusion, providing an important technical reference for the preparation of high quality GOSS by laser recrystallization technology.

Non-homogeneous SiGe-on-insulator Formed by Germanium Condensation Process

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Study of Si–Ge Interdiffusion in Laser Recrystallization of Ge Epitaxial Film on Si Substrate

Fabrication of SiGe/Ge nanostructures by three-dimensional Ge condensation of sputtered SiGe on SiO2/Si substrate

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

High temperature nucleation of oxygen precipitates in Germanium-doped Czochralski silicon

Epitaxial Growth of Fully Relaxed Si0.75Ge0.25 on SOI Substrate

Study of Si and Ge growth on Si(100) surface

The Recrystallization Properties of Poly-Ge<sub>x</sub>Si<sub>1-x</sub>ON SiO<sub>2</sub>/Si

Thermal Annealing Effects on a Compositionally Graded SiGe Layer Fabricated by Oxidizing a Strained SiGe Layer

The Recrystallization Properties of Poly-Ge x Si 1-x ON SiO 2 /Si

The Recrystallization Properties of Poly-GexSi1-xON SiO2/Si

Formation of NiSiGe on Compressivly Strained SiGe Thin Layers

Ge/Si Interdiffusion In The Gesi Dots And Wetting Layers

Growth of Ultrathin Si1-xGex Films on Si Substrate for Fabricating SGOI

Ge-on-insulator fabrication based on Ge-on-nothing technology

Formation, Structure, and Phonon Confinement Effect of Nanocrystalline Si1−xGex in SiO2-Si-Ge Cosputtered Films

High-quality Ge film grown on Si substrate and its thermodynamic mechanism

Retardation of strain relaxation in Si/SiGe/Si heterostructures during high temperature oxidation

Germanium-Induced Texture And Preferential Orientation Of Nisi1-Xgex Layers On Si1-Xgex