Abstract:Germanium-on-Insulator(GOI),which combines the merits of Ge and SOI,is gaining interest as a newly emerged Si-based material.GOI substrate not only has high carrier mobility,but also can avoid the short channel effect,reduce the parasitic capacitance and the leakage current.Several methods to fabricate GOI substrate are available,such as Ge condensation,liquid-phase epitaxial(LPE)growth and Smart-CutTM technology.Among them,Smart-CutTM technology is more suitable for device fabrication due to its low defect density.However,wafer direct bonding,which requires gaining a high bonding strength at low annealing temperature,is the key step and nodus on the Smart-CutTM technology.Hence,before bonding,a strict surface treatment intending to improve the bonding strength is required.In this article,the effects of ammonium hydroxide(NH4OH∶H2O=1∶10)treatment,O2 plasma treatment and N2 plasma treatment on the wafer bonding strength were studied.Results showed that combining N2 plasma treatment to activate Ge and SiO2/Si wafers surface with ammonium hydroxide(NH4OH∶H2O=1∶10)to improve the Ge surface hydrophilicity,a good bonding quality of Ge/SiO2/Si structure with a strong bonding strength(>3.8 MPa)was received.The GOI substrate with a Ge layer about 1 μm was fabricated by Smart-CutTM technology.A smooth and distinct Ge/SiO2 interface was revealed by SEM measurement,and no void was formed in a majority of Ge surface as well.A damaged layer around the hydrogen ion range was generated during hydrogen implantation,and it was left on the GOI surface.Experiments show that the compressive stress of the GOI substrate,and the asymmetric of Ge peak in XRD(004)rocking curve were induced by the damaged layer.It was found that post-annealing in vacuum at 500 ℃ for 30 min could release the stress of damaged layer,but unable to restore damaged layer.Once the damaged layer was corroded by NH4OH∶H2O2∶H2O=1∶1∶10 solution,the stress was removed as well.As shown by XRD measurement,the Ge peak profile became symmetric,the full width at half maximum(FWHM)of the Ge(004)peak was reduce to 70.4 arc sec and almost has not residual stress.

Blocking of Ge/Si Lattice Mismatch and Fabrication of High-Quality SOI-based Ge Film by Interlayer Wafer Bonding with Polycrystalline Ge Bonding Layer

Double Intermediate Bonding Layers for the Fabrication of High-Quality Silicon-on-insulator-based Exfoliated Ge Film with Excellent High-Temperature Characteristics

Polycrystalline Ge intermediate layer for Ge/Si wafer bonding and defect elimination in Si (SOI)-based exfoliated Ge film

Interface Characteristics of Different Bonded Structures Fabricated by Low-Temperature A-Ge Wafer Bonding and the Application of Wafer-Bonded Ge/Si Photoelectric Device

Separation of Wafer Bonding Interface from Heterogenous Mismatched Interface Achieved High Quality Bonded Ge-Si Heterojunction

Bubble Evolution Mechanism and Defect Repair During the Fabrication of High-Quality Germanium on Insulator Substrate

Low-temperature Oxide-Free Silicon and Germanium Wafer Bonding Based on a Sputtered Amorphous Ge

Bonding mechanisms and electrical properties of Ge/Si and Si/Si bonded wafers achieved by thin microcrystalline Ge interlayer

Electrical properties of Si/Si bonded wafers based on an amorphous Ge interlayer

Temperature-dependent Interface Characteristic of Silicon Wafer Bonding Based on an Amorphous Germanium Layer Deposited by DC-magnetron Sputtering

Bubble Evolution Mechanism and Stress-Induced Crystallization in Low-Temperature Silicon Wafer Bonding Based on A Thin Intermediate Amorphous Ge Layer

Interface Characteristics and Electrical Transport of Ge/Si Heterojunction Fabricated by Low-Temperature Wafer Bonding

A review: wafer bonding of Si-based semiconductors

Fabrication of a Polycrystalline SiGe- and Ge-on-insulator by Ge Condensation of Amorphous SiGe on a SiO2/Si Substrate

Fabrication of a polycrystalline SiGe- and Ge-on-insulator by Ge condensation of amorphous SiGe on a SiO<sub>2</sub>/Si substrate

High-quality InGaAs Films Bonded on Si Substrate with a Thin Polycrystalline Si Intermediate Layer

Epitaxial growth of low dislocation Ge thin films on Si (001) substrates using a Si-Ge intermediate layer

Fabrication of Germanium-on-Insulator by Smart-CutTM technology

Epitaxial Growth of Fully Relaxed Si0.75Ge0.25 on SOI Substrate

Effect Of The Thermal Stress On The Defect Evolution At Gaas/Si Wafer Bonding With A-Ge Intermediate Layer

Study of Si–Ge Interdiffusion in Laser Recrystallization of Ge Epitaxial Film on Si Substrate