Abstract:Residual stresses develop in the sol-gel-derived ferroelectric thin films during the transformation of the metal-organic gel to the metal oxide upon thermal treatment and due to the thermal and elastic mismatch between the Pb(Zrx,Ti1−x)O3 (PZT) film and the substrate materials during cooling. In this study, residual stresses were determined using the wafer curvature method after the deposition of multilayer PZT film on platinized (100) silicon wafers. A multilayer model for stress analysis was used to calculate the residual stress in PZT films of three different compositions: x=0.4, x=0.52, and x=0.6. Orientation dependent residual stresses were found in compositions containing the tetragonal phase, with x=0.4 and x=0.52. Depending on the fraction of (100) orientated domains low compressive or low tensile stress was found in Pb(Zr0.4Ti0.6)O3 (PZT 40∕60). Higher residual stress was found in PZT films consisting of only rhombohedral crystallographic structure (PZT 60∕40) while the residual stress in PZT films with morphotropic boundary composition (PZT 52∕48) was significantly dependent on the film orientation and the phase composition and could range from 17to90MPa. The effect of the film orientation on residual stress was found to be a function of the anisotropic thermal expansion coefficient of PZT. The contribution of the thermal and elastic properties of materials to the total wafer curvature was investigated and discussed. Finally, the residual stress results calculated with the four layer model were compared to the results calculated using the Stoney equation.

Influences of crystallization temperature and slurry concentration on stress of PZT thick film prepared by a modified sol-gel method

Preparation of PZT Thick Film by a High Speed Sol-gel Method

Residual Stresses In Pt Bottom Electrodes For Sol-Gel Derived Lead Zirconate Titanate Thin Films

Stress-induced shifting of the morphotropic phase boundary in sol–gel derived Pb(Zr0.5Ti0.5)O3 thin films

Development of Residual Stress in Sol-Gel Derived Pb(Zr,Ti)O-3 Films: an Experimental Study

Sol–gel derived Pb(Zr,Ti)O3 thin films: Residual stress and electrical properties

Impact of Thermal Stress on the Piezoelectric and Dielectric Properties of Pbtio3 Thick Films on Various Substrates

Residual Stress of (pb0.92la0.08)(zr0.52ti0.48)o3films Grown by a Sol–gel Process

Effect of Annealing Conditions on Residual Stress in Sol-Gel-derived Pb(Zr0.52Ti0.48)O3 Film

Electrical and Mechanical Properties of PZT Thin Films Prepared by Hybrid Process of Sol-Gel Technique and Laser Ablation

Growth and Characterization of Lead Zirconate Titanate (PZT) Thin Films

Crystallization Behavior of PZT Film Prepared by Sol–gel Route

Thickness effects on structures and electrical properties of lead zirconate titanate thick films

Influence of Stress on the Performance of PZT Thin Films for Microphone Application

Influence of Phase Transition Induced by Residual Stress on Ferroelectric Properties of Highly (100)-Oriented Pb(Zr0.52Ti0.48)O3 Thin Films

PZT thin films with preferred-orientation induced by external stress

Effects of Pb Excess and Temperature on Polarization Fatigue in Sol-Gel Derived Pb(Zr0.3ti0.7)O3 Thin Films

Design, synthesis, microstructure and electrical properties of thermal-strained PZT films

Effect of external mechanical stress on the domain structure of Pb(Zr0.35Ti0.65)O3 thin films

Effects of Sintering Behavior on Piezoelectric Properties of Porous Pzt Ceramics

Processing and Thickness Effects on the Microstructure and Electrical Properties of Sol–gel Deposited Pb(Zr, Ti)O3 Films