Abstract:Epitaxial Pb(Zr,Ti)O3(PZT) films, 1.5–2.0μm in thickness, with a Zr∕(Zr+Ti) ratio ranging from 0.20 to 0.75 were grown on (100)c-,(110)c-, and (111)c-oriented SrRuO3∕∕SrTiO3 substrates at 600 °C by metal-organic chemical vapor deposition (MOCVD). The effects the Zr∕(Zr+Ti) ratio had on the crystal structure, dielectric and ferroelectric properties, and piezoelectric response of these films with different crystal orientations were systematically investigated. We ascertained from x-ray-diffraction reciprocal-space-mapping analysis that (001)T-∕(100)T-∕(100)R-,(101)T-∕(110)T-∕(110)R-∕(101¯)R-, and (111)T-∕(111)R-∕(111¯)R-oriented films had epitaxially grown on the respective (100)c-,(110)c-, and (111)c-oriented SrRuO3∕∕SrTiO3 substrates. The constituent phase changed from a tetragonal single phase, a mixture phase of a tetragonal and rhombohedral, to a rhombohedral single phase with increasing Zr∕(Zr+Ti) ratio irrespective of the orientation of the substrates. However, the range of the Zr∕(Zr+Ti) ratio of the film with the mixture phase differed depending on crystal orientation. This suggests that the stress relaxation process applied from the substrates changed due to crystal orientation. The relative dielectric constant was maximum for films with the mixture phase regardless of the crystal orientation. Remanent polarization was also maximum for these films on the (111)cSrRuO3∕∕SrTiO3 substrates, while it was minimum on the (100)c- and (110)c-oriented SrRuO3∕∕SrTiO3 substrates. Films with two phases coexisting had larger electric-field-induced strain than films with a single tetragonal or rhombohedral phase for the (111)-oriented films, but there were no remarkable changes in the (100)- and (110)-oriented films. Small ac signal measurements suggested that domain-wall motions easily occurred in the (111)-oriented films with the mixture phase compared with other orientations. These results indicated that the larger field-induced strain of the (111)-oriented PZT films consisting of a mixture of tetragonal and rhombohedral phases largely contributed to extrinsic factors such as domain-wall motions and phase transformation due to the applied electric field.

Stress-induced shifting of the morphotropic phase boundary in sol–gel derived Pb(Zr0.5Ti0.5)O3 thin films

Influence of Phase Transition Induced by Residual Stress on Ferroelectric Properties of Highly (100)-Oriented Pb(Zr0.52Ti0.48)O3 Thin Films

Influence of Tensile Stress on the Phase Formation and Electronic Properties of Pb(Zr,Ti)O-3 Film at Morphotropic Phase Boundary

Phase transitions and thermal-stress-induced structural changes in a ferroelectric Pb(Zr0.80Ti0.20)O3 single crystal

Effect of external mechanical stress on the domain structure of Pb(Zr0.35Ti0.65)O3 thin films

Thickness and frequency dependence of electric-field-induced strains of sol-gel derived (Pb 0.97 La 0.02 )(Zr 0.95 Ti 0.05 )O 3 antiferroelectric films

Development of Residual Stress in Sol-Gel Derived Pb(Zr,Ti)O-3 Films: an Experimental Study

Orientation-dependent Phase Switching Process and Strains of Pb0.97La0.02(Zr0.85Sn0.13Ti0.02)O3 Antiferroelectric Thin Films

A Comprehensive Investigation on the Phase Transformation Behavior and Electrical Properties of (pb1−xbax)zro3 (≤x≤0.5) Thin Films

Phase transformation behavior of (Pb,La)(Zr,Sn,Ti)O 3 and Pb (Nb,Zr,Sn,Ti)O 3 antiferroelectric thin films deposited on LaNiO 3 -buffered silicon substrates by sol-gel processing

Thickness Effect on Electrical Properties of Pb(Zr0.52Ti0.48)O3 Thick Films Embedded with ZnO Nanowhiskers Prepared by a Hybrid Sol–gel Route

Sol–gel derived Pb(Zr,Ti)O3 thin films: Residual stress and electrical properties

In-situ X-ray Diffraction Study of Stress-Induced Phase Transition of (1 − X)bazr0.2ti0.8o3–xba0.7ca0.3tio3 in Polymer Matrix Composite

PZT thin films with preferred-orientation induced by external stress

Stress Analysis and Ferroelectric Properties of Pb(Zr0.52Ti0.48)0.96Nb0.04O3 Thin Film Grown on Different Thickness of BaPbO3 Electrodes

Enhanced Piezoelectricity by Polarization Rotation through Thermal Strain Manipulation in PbZr0.6Ti0.4O3 Thin Films

Shift of Morphotropic Phase Boundary in High-Performance [111]-Oriented Epitaxial Pb (zr, Ti)O-3 Thin Films

Phase compositions and ferroelectric properties of Pb(Zr0.52,Ti0.48)O3 thin films with different highly orientations prepared by a sol–gel route

Local Study on the Composition and Temperature Induced Structural Change of Pzt

Dependence of electrical properties of epitaxial Pb(Zr,Ti)O3 thick films on crystal orientation and Zr∕(Zr+Ti) ratio

Octahedral tilting, monoclinic phase and the phase diagram of PZT