Abstract:Microelectromechanical systems (MEMS) are in widespread commercial use due to their compact size, high performance, and low cost. MEMS resonators have emerged as front runners for sensing (accelerometers, gyroscopes, and particulate matter) and frequency (RF front-end, filters, timing, and frequency source) applications. The excellent stability, resolution, and accuracy of resonators lead them an ideal candidate for sensor implementation. The CMOS-MEMS technology allows for rapid, large-scale, and low-cost manufacturing. Thermal–piezoresistive resonators (TPRs) are promising candidates due to their favorable potential with scaling and robust performance in the ambient environment. A detailed finite element method (FEM) simulation flow is presented along with a mathematical model for device optimization. The devices were fabricated with the commercial CMOS technology utilizing the front-end-of-line (FEOL) polysilicon and back-end-of-line (BEOL) materials like silicon dioxide and interconnect metal. The flexibility of selective material placement in layout and complex routing using multi-metal interconnect is employed to develop a balanced TPR design at 2 MHz. A 5-MHz bulk mode TPR was designed for mass sensing application. The fabricated devices were characterized, and their performance is compared with other state-of-the-art works. Finally, the developed devices were used in real-world applications for mass sensing and pressure sensing. The device achieved 20 kHz/ng. The TPR devices combine principles of Pirani gauge and resonant sensors for improving the sensing range from 2 to 760 Torr (1 atm).

Characterization of packaged inline-type radio frequency microelectromechanical systems power sensors

Characteristics of phase delay in capacitive pick-off circuits for MEMS resonators

Packaging a RF-MEMS system

Investigation of packaging structure for MEMS phase shifters

Influence of Wafer Level Packaging Modes on RF Performance of MEMS Phase Shifters

Chip-levelVacuum Package and Test of Resonant MEMS Electric Field Sensor

Design and Fabrication of a MEMS Temperature and Pressure Integrated Sensor with Back-Inlet Package Structure

Study of MEMS packaging technology

CMOS-MEMS Thermal-Piezoresistive Resonators and Oscillators for Sensors

BCB Based Packaging for Low Actuation Voltage RF MEMS Devices

Research status of wafer level packaging for RF MEMS switches

On-wafer level packaging of RF MEMS devices for Ka-band applications

Fabrication and wafer-level vacuum packaging of MEMS resonant pressure sensor

Wafer-Level Vacuum-Packaged Electric Field Microsensor: Structure Design, Theoretical Model, Microfabrication, and Characterization

Design and Characterization of an Integrated Multifunction Micro Sensor

Packaging of RF Mems Switching Functions on Alumina Substrate

Design and 3D Printing-Assisted Fabrication of Microwave Resonator-Based Passive Wireless Sensors for Simultaneous Measuring High Temperatures and Pressures

Design and Consideration of Wafer Level Micropackaging for Distributed RF MEMS Phase Shifters

High Vacuum Packaging of MEMS Devices Containing Heterogeneous Discrete Components

Design and Fabrication of MEMS Acceleration Sensor for Device-Level Vacuum Packaging

Dynamic Characterization of an Innovative RF MEMS Switch