The Growth Simulation of Ti Thin Film Onto Si Substrate

WU Qing-ying,CHEN Xiao-long,SUN Ling-guang,LUO Shun-zhong,ZHU Jian-guo
DOI: https://doi.org/10.3969/j.issn.1001-9731.2013.05.028
2013-01-01
Journal of Functional Biomaterials
Abstract:The initial stage growth peculiarity of Ti thin film onto Si substrate was simulated by a three-dimensional kinetic Monte Carlo model.The simulation results show that the number of initial nucleus of Ti thin film decreased gradually with the increasing of deposition temperature,and the size of the Ti grains gets larger with the increasing of the deposition temperature when the diffusion cut-off step was 50.It was found that the surface root-mean-square roughness of Ti thin film was increased and the relative density of Ti film was decreased with the increasing of the deposition rate.Higher deposition temperature and lower deposition rate is beneficial to the growth of Ti thin film.
What problem does this paper attempt to address?