Abstract:In this work, we investigated the epitaxial growth of (010) β-Ga2O3 and β-(Al x Ga1–x )2O3 films using metalorganic chemical vapor deposition (MOCVD) with trimethylgallium (TMGa) as the precursor, aiming for high growth rates for thick films. We observed pyramid-shaped defects in the β-Ga2O3 epitaxial films, characterized by polygon-shaped bumps and inverted pyramids embedded in the epi-films. To improve the surface morphology and suppress the defects formation, we developed a novel approach that incorporates a small amount of aluminum (Al) during the growth process. This addition led to significant improvements in surface morphology and reductions in both the density and size of defects for the low-Al β-(Al x Ga1–x )2O3 films, with a growth rate of 5.5 μm/h. Our findings demonstrate the effectiveness of this approach in optimizing the surface morphology of thick β-(Al x Ga1–x )2O3 films with rapid growth rates. We achieved the best surface for β-(Al x Ga1–x )2O3 in an 11 μm-thick film with approximately 2% Al composition, grown at a rate of 5.5 μm/h. However, we also observed that defect density and size increase with film thickness. Room temperature Hall measurements were used to characterize the electrical properties of the low-Al β-(Al x Ga1–x )2O3 films, which revealed a decrease in Si incorporation efficiency and room temperature mobility with increasing Al composition. Results indicated that increasing the chamber pressure led to a decrease in both growth rate and Al composition at a constant [TMAl]/[TMGa + TMAl] molar flow rate ratio. The β-(Al x Ga1–x )2O3 films (∼11 μm) with optimal surface quality were grown at chamber pressures between 60 and 100 torr. This work demonstrates the feasibility of growing (010) low-Al β-(Al x Ga1–x )2O3 thick films with high growth rates and minimal surface defects using MOCVD. Our findings provide valuable insights into β-(Al)GaO growth and suggest that introducing Al is an effective strategy for improving the surface morphology of β-(Al)GaO films. These results have important implications for the development of high-performance (Al)GaO-based vertical power devices.

The Research on Ostwald Ripen Process of GaAs (001) Films by MBE Growth

The Research on Growth of GaAs under the Monitoring of RHEED

The MBE Growth Research on InGaAs/GaAs Heterofilms

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Investigation of the surface optimization of -Ga<sub>2</sub>O<sub>3</sub> films assisted deposition by pulsed MOCVD

Growth rate control and phase diagram of wafer-scale Ga2O3 films by MOCVD

Comparison of surface morphologies in GaN films grown by rf-MBE and MOCVD on vicinal sapphire (0001) substrates

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Stm Study of the Ga Thin Films Grown on Si(111) Surface

Characterization of GaAs Thin Films Grown by Molecular Beam Epitaxy on Si-on-insulator

Effects of Annealing and Substrate Orientation on Epitaxial Growth of GaAs on Si

Study on Temperature Calibration and Surface Phase Transition of Gaas Crystal Substrate in Mbe Growth by Rheed Real-Time Monitoring

MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates

Investigation of Β‐ga2o3 Film Growth Mechanism on C‐plane Sapphire Substrate by Ozone Molecular Beam Epitaxy

The Investigation for ZnO Thin Films Ripening on Si Substrate

MOCVD Growth of Thick β-(Al)GaO Films with Fast Growth Rates

Achieving Atomically Flat Surfaces for LiGaO2 Substrates for Epitaxial Growth of GaN Films

STUDY ON GROWTH OF C 60 MOLECULES ON GaAs(001) SUBSTRATE BY SCANNING TUNNELING MICROSCOPY

Molecular-Beam Epitaxy of Gaas on Si-On-Insulator

GaN MOCVD Growth on ZnAl2O4/α-Al2O3 Substrates

Systematic Investigation of the Growth Kinetics of Β -Ga2o3 Epilayer by Plasma Enhanced Chemical Vapor Deposition