Abstract:In recent years, research based on HfO 2 as a charge trap memory has become increasingly popular. This material, with its advantages of moderate dielectric constant, good interface thermal stability and high charge trap density, is currently gaining in prominence in the next generation of nonvolatile memory devices. In this study, memory devices based on a-IGZO thin-film transistor (TFT) with HfO 2 /Al 2 O 3 /HfO 2 charge trap layer (CTL) were fabricated using atomic layer deposition. The effect of the Al 2 O 3 layer thickness (1, 2, and 3 nm) in the CTL on memory performance was studied. The results show that the device with a 2-nm Al 2 O 3 layer in the CTL has a 2.47 V memory window for 12 V programming voltage. The use of the HfO 2 /Al 2 O 3 /HfO 2 structure as a CTL lowered the concentration of electrons near the tunnel layer and the loss of trapped electrons. At room temperature, the memory window is expected to decrease by 0.61 V after 10 years. The large storage window (2.47 V) and good charge retention (75.6% in 10 years) of the device under low-voltage conditions are highly advantageous. The charge retention of the HfO 2 /Al 2 O 3 /HfO 2 trap layer affords a feasible method for fabricating memory devices based on a-IGZO TFT.

Optimization of Hfo2 Growth Process by Atomic Layer Deposition (ald) for High Performance Charge Trapping Flash Memory Application

Process Optimization of HfAlO Trapping Layer for High Performance Charge Trap Flash Memory Application

Low Temperature Atomic Layer Deposited Hfo2 Film for High Performance Charge Trapping Flash Memory Application

Enhancement of the Charge Trapping Performances with HfAlO Composite Oxide Thin Films in SONOS-type Nonvolatile Memory

Effects of Composition on the Memory Characteristics of (Hfo2)x(al2o3)1-Xbased Charge Trap Nonvolatile Memory

Improvement of Memory Characteristics of Charge-Trapping Memory Device by Using HfO$_2$/Al$_2$O$_3$ Laminate

Study on the Charge Storage Characteristics of High-k(HfO_2)_(0.8)(Al_2O_3)_(0.2) Based Charge Trapping Memory Device

Characteristics of atomic layer deposition-derived all-high-k-based structures for flash memory application

Performance Improvement of Charge Trap Flash Memory by Using A Composition-Modulated High-K Trapping Layer

The Interface Inter-Diffusion Induced Enhancement of the Charge-Trapping Capability in Hfo2/Al2o3 Multilayered Memory Devices

Improvement of the Charge Retention of a Non-Volatile Memory by a Bandgap-Engineered Charge Trap Layer

Defect States And Charge Trapping Characteristics Of Hfo2 Films For High Performance Nonvolatile Memory Applications

Improved Memory Characteristics of A Novel TaN/Al2O3/TiO2/HfO2/SiO2/Si Structured Charge Trapping Memory

Charge Trapping Memory Characteristics of P-Si/ultrathin Al[sub 2]o[sub 3]∕(hfo[sub 2])[sub 0.8](al[sub 2]o[sub 3])[sub 0.2]∕al[sub 2]o[sub 3]/metal Multilayer Structure

Outstanding Memory Characteristics with Atomic Layer Deposited Ta2O5/Al2O3/TiO2/Al2O3/Ta2O5 Nanocomposite Structures As the Charge Trapping Layer

Visualization on Charge Distribution Behavior in Thickness-Scalable HfO2 Trapping Layer by In-Situ Electron Holography and Kelvin Probe Force Microscopy Technology

Enhanced charge storage performance in AlTi4Ox/Al2O3 multilayer charge trapping memory devices

Influence of HfAlO Composition on Memory Effects of Metal-Oxide-semiconductor Capacitors with Al2O3/HfAlO/Al2O3 Layers and Pd Electrode

Engineering Improvement of the Core Layers of Charge Trapping Flash Memory Based on Doped HfO2 and Segmented Fabrication

The Effect of Thermal Treatment Induced Inter-Diffusion at the Interfaces on the Charge Trapping Performance of Hfo2/Al2o3 Nanolaminate-Based Memory Devices

Improved Charge-Trapping Properties of Hfyon Film for Nonvolatile Memory Applications in Comparison with Hfon and Y2o3 Films