Abstract:Room-temperature deep Si etching using time-multiplexed deep reactive ion etching (DRIE) processes is investigated to fabricate ultra-high aspect ratio Si nanowires (SiNWs) perpendicular to the silicon substrate. Nanopatterning is achieved using either top-down techniques (e.g. electron beam lithography) or colloidal polystyrene (PS) sphere self-assembly. The latter is a faster and more economical method if imperfections in diameter and position can be tolerated. We demonstrate wire radii from below 100 nm to several micrometers, and aspect ratios (ARs) above 100:1 with etching rates above 1 μm min(-1) using classical mass flow controllers with pulsing rise times of seconds. The mechanical stability of these nanowires is studied theoretically and experimentally against adhesion and capillary forces. It is shown that above ARs of the order of 50:1 for spacing 1 μm, SiNWs tend to bend due to adhesion forces between them. Such large adhesion forces are due to the high surface energy of silicon. Wetting the SiNWs with water and drying also gives rise to capillary forces. We find that capillary forces may be less important for SiNW collapse/bending compared to adhesion forces of dry SiNWs, contrary to what is observed for polymeric nanowires/nanopillars which have a much lower surface energy compared to silicon. Finally we show that SiNW arrays have oleophobic and superoleophobic properties, i.e. they exhibit excellent anti-wetting properties for a wide range of liquids and oils due to the re-entrant profile produced by the DRIE process and the well-designed spacing.

Fabrication of silica nanowire bunch arrays in SiO vapor generated by oxygen plasma etching of silicon

Fabrication of Amorphous Silica Nanowires Via Oxygen Plasma Treatment of Polymers on Silicon

OS1503 Development of Highly Ordered Silicon Nanowire Array

A General Approach For Fabricating Arc-Shaped Composite Nanowire Arrays By Pulsed Laser Deposition

Fabrication of Nanopillars Based on Silicon Oxide Nanopatterns Synthesized in Oxygen Plasma Removal of Photoresist

A General Approach for Fabricating Arc‐Shaped Composite Nanowire Arrays by Pulsed Laser Deposition

Fabrication of Silicon Nanowire Arrays with Controlled Diameter, Length, and Density

Flow Assisted Synthesis of Highly Ordered Silica Nanowire Arrays

Silicon Nano-Wire Fabricated by Boe Silicon Etching

Silicon nanowires fabricated by thermal evaporation of silicon monoxide

Tiny SiO2 nano-wires synthesized on Si (111) wafer

Arrays of ZnO Nanowires Fabricated by a Simple Chemical Solution Route

Silicon Nano-Wires Fabricated by Thermal Evaporation of Silicon Wafer

Fabrication of Vertically Stacked Single-Crystalline Si Nanowires Using Self-Limiting Oxidation

Fabrication of Silicon Nano-Wire by Oxidation

Aligned 1d Silicon Nanostructure Arrays by Plasma Etching

Scalable flame synthesis of SiO2 nanowires: dynamics of growth

Ultra-high aspect ratio Si nanowires fabricated with plasma etching: plasma processing, mechanical stability analysis against adhesion and capillary forces and oleophobicity

Precise morphology control of in-plane silicon nanowires via a simple plasma pre-treatment

Growth of silica nanowire arrays by reaction of Si substrate with oxygen using Ga as catalyst

Fabrication of Single‐Crystalline Silicon Nanowires by Scratching a Silicon Surface with Catalytic Metal Particles