Abstract:A major challenge of resistive switching memory (resistive random access memory (RRAM)) for future application is how to reduce the fluctuation of the resistive switching parameters. In this letter, with a statistical methodology, we have systematically analyzed the reset statistics of the conductive bridge random access memory (CBRAM) with a Cu/HfO2/Pt structure which displays bipolar switching property. The experimental observations show that the distributions of the reset voltage (Vreset) and reset current (Ireset) are greatly influenced by the initial on-state resistance (Ron) which is closely related to the size of the conductive filament (CF) before the reset process. The reset voltage increases and the current decreases with the on-state resistance, respectively, according to the scatter plots of the experimental data. Using resistance screening method, the statistical data of the reset voltage and current are decomposed into several ranges and the distributions of them in each range are analyzed by the Weibull model. Both the Weibull slopes of the reset voltage and current are demonstrated to be independent of the on-state resistance which indicates that no CF dissolution occurs before the reset point. The scale factor of the reset voltage increases with on-state resistance while that of the reset current decreases with it. These behaviors are fully in consistency with the thermal dissolution model, which gives an insight on the physical mechanism of the reset switching. Our work has provided an inspiration on effectively reducing the variation of the switching parameters of RRAM devices.

Ultra-low RESET Current RRAM Device by Side-Reset Operation Method

Overcoming the Dilemma Between RESET Current and Data Retention of RRAM by Lateral Dissolution of Conducting Filament

Complementary Metal Oxide Semiconductor Compatible Hf-Based Resistive Random Access Memory with Ultralow Switching Current/Power

Record Low-Power Organic RRAM With Sub-20-nA Reset Current

Investigation on the RESET Switching Mechanism of Bipolar Cu/HfO2/Pt RRAM Devices with a Statistical Methodology

Ultralow-Power RRAM with a High Switching Ratio Based on the Large van der Waals Interstice Radius of TMDs

Low Power and High Uniformity of HfOx-based RRAM Via Tip-Enhanced Electric Fields

A novel self-selection bipolar RRAM cell with ultra-low operation currents for cross-point application

Fast Step-Down Set Algorithm of Resistive Switching Memory with Low Programming Energy and Significant Reliability Improvement

Ultrafast RESET Analysis of HfOx‐Based RRAM by Sub‐Nanosecond Pulses

Voltage and Power-Controlled Regimes in the Progressive Unipolar Reset Transition of Hfo2-Based Rram

Nonvolatile Memory: Ultrafast Multilevel Switching in Au/YIG/n-Si RRAM (Adv. Electron. Mater. 2/2019)

Al2O3/HfO2 Functional Stack Films Based Resistive Switching Memories with Controlled SET and RESET Voltages

Ultrafast Multilevel Switching in Au/YIG/n‐Si RRAM

Self-Rectifying and Forming-Free Resistive-Switching Device for Embedded Memory Application

Interface-Induced Two-Step Reset for Filament-Based Multi-Level Resistive Memory

a-SiN x :H-based ultra-low power resistive random access memory with tunable Si dangling bond conduction paths

Low-Power Resistive Switching Characteristics in TiN/TaON/SiO2/Pt RRAM Devices for Neuromorphic Applications

Statistical Characteristics of Reset Switching in Cu/HfO2/Pt Resistive Switching Memory

Ultralow Set Voltage and Enhanced Switching Reliability for Resistive Random-Access Memory Enabled by an Electrodeposited Nanocone Array.

A novel high-performance and energy-efficient RRAM device with multi-functional conducting nanofilaments