Abstract:Functional Materials Letters, Ahead of Print. In our study, we successfully demonstrated bipolar resistive switching in Resistive Random-Access Memory (RRAM) devices using MAPbI[math][math]Cl[math] mixed halide perovskite, thereby underscoring the immense potential of this material for future memory applications. By incorporating polyvinylpyrrolidone (PVP) into the device structure, which consists of MAPbI[math][math]Cl[math] sandwiched between top (Au) and bottom (ITO) electrodes, we achieved a remarkable morphological transition from elongated, needle-like structures to denser, more compact forms. This morphological evolution was pivotal in significantly lowering operational voltages, with "SET" and "RESET" voltages dramatically reduced from 7 V to 0.7 V and -2.2 V to -0.2 V, respectively. The incorporation of PVP proved to be a key factor in this achievement, as it enhanced charge transport within the device, minimized energy barriers, and markedly improved the dielectric properties of the perovskite material. These enhancements contributed directly to the observed reduction in switching voltages, marking a substantial leap forward in the quest for more efficient, stable, and low-power RRAM devices. Our research not only advances the field of memory technology but also emphasizes the critical aspects of reduced power consumption and the potential for enhanced device stability. This significant decrease in energy requirements, coupled with the prospect of increased device longevity, underscores the transformative impact of our findings, paving the way for the development of sustainable and reliable memory technologies that are well-suited to meet the demands of future electronic devices and systems.

Record Low-Power Organic RRAM With Sub-20-nA Reset Current

Complementary Metal Oxide Semiconductor Compatible Hf-Based Resistive Random Access Memory with Ultralow Switching Current/Power

Ultra-low RESET Current RRAM Device by Side-Reset Operation Method

Very Low-Programming-Current RRAM with Self-Rectifying Characteristics

Resistive Switching in Organic Memory Device Based on Parylene-C With Highly Compatible Process for High-Density and Low-Cost Memory Applications

Ultralow-Power RRAM with a High Switching Ratio Based on the Large van der Waals Interstice Radius of TMDs

16-Layer 3D Vertical RRAM with Low Read Latency (18ns), High Nonlinearity (>5000) and Ultra-low Leakage Current (~pa) Self-Selective Cells

Low Power and High Uniformity of HfOx-based RRAM Via Tip-Enhanced Electric Fields

Inorganic-Organic Hybrid Resistive Switching Memory with High Uniformity and Multilevel Operation

A novel self-selection bipolar RRAM cell with ultra-low operation currents for cross-point application

Overcoming the Dilemma Between RESET Current and Data Retention of RRAM by Lateral Dissolution of Conducting Filament

Bipolar resistive switching in MAPbI[math]Cl[math] mixed halide perovskite with polyvinylpyrrolidone additives

Improved Al 2 O 3 RRAM performance based on SiO 2 /MoS 2 quantum dots hybrid structure

Highly Compact 1T-1R Architecture (4f(2) Footprint) Involving Fully Cmos Compatible Vertical Gaa Nano-Pillar Transistors and Oxide-Based Rram Cells Exhibiting Excellent Nvm Properties and Ultra-Low Power Operation

Biodegradable and flexible ι-carrageenan based RRAM with ultralow power consumption

Pure logic CMOS based embedded Non-Volatile Random Access Memory for low power RFID application

Linear Scaling of Reset Current Down to 22-Nm Node for a Novel $\hbox{cu}_{x}\hbox{si}_{y}\hbox{o}$ RRAM

Low Power Parylene‐Based Memristors with a Graphene Barrier Layer for Flexible Electronics Applications

Ultralow Power Switching of Ta2O5/AlOXbilayer Synergistic Resistive Random Access Memory

Low-Power, Multilevel And Analog Character'S In The Multi-Layer-Oxide Based Rram Devices Compatible With Cmos Technology

Resistance-switchable conjugated polyrotaxane for flexible high-performance RRAMs