Abstract:The precise extraction of a thin slice (lamellae) from nano electronic devices using a focused ion beam (FIB) is crucial for transmission electron microscopy analysis, but it remains a challenge for 100 nm and beyond scale device components. In this study, we introduce a new method that utilizes the device's own features as markers during FIB thinning process by continuously monitoring the intermediate structures with secondary electron scanning electron microscopy (SE-SEM) imaging. This allows for the targeted extraction of the desired device component with high precision. We successfully demonstrate the effectiveness of this approach by extracting lamellae from 100 nm length channel in arrayed carbon nanotube film field-effect transistors using FIB lift-out. Lay Description: In today's semiconductor industry, nanoscale and even atomic-scale investigation of the processing and product quality of nanodevices is essential, for which the combination of focused ion beam (FIB) and transmission electron microscope (TEM) is a commonly used tool. A key requirement is to ensure the TEM examined device components are precisely defined during the FIB process, which is becoming a challenge particularly for 100 nm scale (and beyond) nanodevices. In this study, the authors propose and further demonstrate a self-marked method that enables the feasibility of extracting sub-100 nm components of nanodevices (using the state-of-the art carbon nanotube transistor as a demo) using FIB, by continuously monitoring intermediate structures with secondary electron scanning electron microscopy (SE-SEM) imaging. This article is protected by copyright. All rights reserved.

Characterization of Nanoline Based on SEM Images

Fabrication and characterization of typical nano scale structures

Characterization of Line Edge Roughness and Line Width Roughness of Nano-Scale Typical Structures.

Analysis and Characterization of Line Edge Roughness of Nanostructures

Photolithography Using Lateral Surface of Nanofibers

Measurement of Linewidth for Nano-scale Lines Prepared by Multilayer Thin Films

Self-marked preparation of site-specific transmission electron microscope lamellae of nanodevices using focusing ion beam technique.

Motif Parameters Based Characterization of Line Edge Roughness of a Nanoscale Grating Structure

Measurement of linewidth and line edge roughness for ID nano CD linewidth standard product lines

Linewidth Characterization of a Self-traceable Grating by SEM

Fabrication and characterization of nano-scale lines through anodic porous alumina membrane

Measurement and Calculation Method for Sub-20 Nm Line and DSA Patterns

A strategy to fabricate nanostructures with sub-nanometer line edge roughness

Fabrication and Characterization of Sub-45 Nm Multiple Linewidth Samples

Nanostep Fabrication Using FIB Technology

Evaluation of Width and Width Uniformity of Near-Field Electrospinning Printed Micro and Sub-Micrometer Lines Based on Optical Image Processing

Linewidth Roughness In Nanowire-Mask-Based Graphene Nanoribbons

Microfabrication of Nano-Scale Feature Lines

Investigations on Line-Edge Roughness (LER) and Line-Width Roughness (LWR) in Nanoscale CMOS Technology: Part I–Modeling and Simulation Method

Quantitative evaluation of residual resist in electron beam lithography based on scanning electron microscopy imaging and thresholding segmentation algorithm

Nanostructures and Nanodevices Special Fabrication and Characterization