Abstract:In this paper, the effects of nanowire line-edge roughness (LER) in gate-all-around silicon nanowire MOSFETs (SNWTs) are comprehensively investigated through 3-D statistical simulation. The LER impacts on both the device performance variation and mean value degradation are discussed in detail. Due to the unique nature of a nanowire structure, the LER in SNWTs contains two degrees of freedom, which allows the nanowire edges to vary in arbitrary transverse direction and which is different from the LER in traditional devices with one degree of freedom. In order to identify the relative importance of the diameter and center position variations, the nanowire LER can be considered as the combination of two basic types: One has a varied diameter with a fixed center (type A), and the other has a varied center position with a fixed diameter (type B). The results indicate the tradeoff between these two types of LER, with type A of a larger performance variation and type B of a larger performance degradation. Furthermore, as the gate length L-g shrinks below the correlation length. of the nanowire LER, the impacts from the source/drain extension region will dominate the variation. The impact of the main LER parameters is discussed for the scaled case with a nonGaussian distribution in the device electrical parameters observed, and a new statistical method is proposed for better evaluation. On the other hand, the performance variation becomes insensitive to the correlation length in the case of Lambda > L-g, which indicates a higher tolerance for the nanowire LER design in ultrascaled SNWTs. The optimized LER parameters are also given for the nanowire LER design with acceptable performance variation and suppressed mean value degradation in SNWTs.

Investigations on Line-Edge Roughness (LER) and Line-Width Roughness (LWR) in Nanoscale CMOS Technology: Part I–Modeling and Simulation Method

Investigations on the Correlation Between Line-Edge-roughness (LER) and Line-Width-roughness (LWR) in Nanoscale CMOS Technology

Investigations on Line-Edge Roughness (LER) and Line-Width Roughness (LWR) in Nanoscale CMOS Technology: Part II–Experimental Results and Impacts on Device Variability

Simulation of Correlated Line-Edge Roughness in Multi-Gate Devices

Analysis and Characterization of Line Edge Roughness of Nanostructures

Characterization of Line Edge Roughness and Line Width Roughness of Nano-Scale Typical Structures.

Analysis Method for Nanometer-Scale Line Edge Roughness Based on Stationary Wavelet Transform

Photoresist Process Simulation to Study Line Edge Roughness

Simulation of line-edge roughness effects in silicon nanowire MOSFETs

Impact of Line Edge Roughness and Linewidth Roughness on Critical Dimension Variation

Recognition of the Single-Side Surface and Measurmement of Line Edge Roughness

Metrology Method of Line Edge Roughness with Nanometer Scale Precision Using Atomic Force Microscopes

Spatial analysis of line-edge roughness through scaling and fractal concepts using AFM techniques

Influence Factors of Line Edge Roughness Measured by AFM

Investigation of Nanowire Line-Edge Roughness in Gate-All-Around Silicon Nanowire MOSFETs

Investigation on the effective immunity to process induced line-edge roughness in silicon nanowire MOSFETs

Analysis of Linewidth Uniformity and Line Edge/Width Roughness in a 5 Nm Logic SAQP Process

Amplitude and Spatial Frequency Characterization of Line Edge Roughness Using AFM

Multiscale Characterization Method For Line Edge Roughness Based On Redundant Second Generation Wavelet Transform

Line-Edge Roughness from Extreme Ultraviolet Lithography to Fin-Field-Effect-Transistor: Computational Study

Impacts of gate line edge roughness on sub 100nm MOSFETs