Abstract:In this paper, the effects of nanowire line-edge roughness (LER) in gate-all-around silicon nanowire MOSFETs (SNWTs) are comprehensively investigated through 3-D statistical simulation. The LER impacts on both the device performance variation and mean value degradation are discussed in detail. Due to the unique nature of a nanowire structure, the LER in SNWTs contains two degrees of freedom, which allows the nanowire edges to vary in arbitrary transverse direction and which is different from the LER in traditional devices with one degree of freedom. In order to identify the relative importance of the diameter and center position variations, the nanowire LER can be considered as the combination of two basic types: One has a varied diameter with a fixed center (type A), and the other has a varied center position with a fixed diameter (type B). The results indicate the tradeoff between these two types of LER, with type A of a larger performance variation and type B of a larger performance degradation. Furthermore, as the gate length L-g shrinks below the correlation length. of the nanowire LER, the impacts from the source/drain extension region will dominate the variation. The impact of the main LER parameters is discussed for the scaled case with a nonGaussian distribution in the device electrical parameters observed, and a new statistical method is proposed for better evaluation. On the other hand, the performance variation becomes insensitive to the correlation length in the case of Lambda > L-g, which indicates a higher tolerance for the nanowire LER design in ultrascaled SNWTs. The optimized LER parameters are also given for the nanowire LER design with acceptable performance variation and suppressed mean value degradation in SNWTs.

Investigations on the Correlation Between Line-Edge-roughness (LER) and Line-Width-roughness (LWR) in Nanoscale CMOS Technology

Investigations on Line-Edge Roughness (LER) and Line-Width Roughness (LWR) in Nanoscale CMOS Technology: Part I–Modeling and Simulation Method

Investigations on Line-Edge Roughness (LER) and Line-Width Roughness (LWR) in Nanoscale CMOS Technology: Part II–Experimental Results and Impacts on Device Variability

Simulation of Correlated Line-Edge Roughness in Multi-Gate Devices

Investigation of Nanowire Line-Edge Roughness in Gate-All-Around Silicon Nanowire MOSFETs

Photoresist Process Simulation to Study Line Edge Roughness

Simulation of line-edge roughness effects in silicon nanowire MOSFETs

Investigation on the effective immunity to process induced line-edge roughness in silicon nanowire MOSFETs

Analysis of Linewidth Uniformity and Line Edge/Width Roughness in a 5 Nm Logic SAQP Process

Wafer Level Reliability Evaluation of Gate Oxide for Advanced CMOS Process

Impact of Line Edge Roughness on Copper Interconnects

Impacts of gate line edge roughness on sub 100nm MOSFETs

Measurement and Calculation Method for Sub-20 Nm Line and DSA Patterns

A New Method to Fin-width Line Edge Roughness Effect of FinFET Performance

Line-Edge Roughness from Extreme Ultraviolet Lithography to Fin-Field-Effect-Transistor: Computational Study

The impact of line edge roughness on the stability of a FinFET SRAM

A novel approach to simulate Fin-width Line Edge Roughness effect of FinFET performance

Efficient Statistical Capacitance Extraction of Nanometer Interconnects Considering the On-Chip Line Edge Roughness

Canny Algorithm Enabling Precise Offline Line Edge Roughness Acquisition in High-Resolution Lithography.

Line Edge Roughness after Development in a Positive-Tone Chemically Amplified Resist of Post-Optical Lithography Investigated by Monte Carlo Simulation and a Dissolution Model.

A strategy to fabricate nanostructures with sub-nanometer line edge roughness