Abstract:The technological advance of High Numerical Aperture Extreme Ultraviolet Lithography (High NA EUVL) has opened the gates to extensive researches on thinner photoresists (below 30nm), necessary for the industrial implementation of High NA EUVL. Consequently, images from Scanning Electron Microscopy (SEM) suffer from reduced imaging contrast and low Signal-to-Noise Ratio (SNR), impacting the measurement of unbiased Line Edge Roughness (uLER) and Line Width Roughness (uLWR). Thus, the aim of this work is to enhance the SNR of SEM images by using a Deep Learning denoiser and enable robust roughness extraction of the thin resist. For this study, we acquired SEM images of Line-Space (L/S) patterns with a Chemically Amplified Resist (CAR) with different thicknesses (15nm, 20nm, 25nm, 30nm), underlayers (Spin-On-Glass-SOG, Organic Underlayer-OUL) and frames of averaging (4, 8, 16, 32, and 64 Fr). After denoising, a systematic analysis has been carried out on both noisy and denoised images using an open-source metrology software, SMILE 2.3.2, for investigating mean CD, SNR improvement factor, biased and unbiased LWR/LER Power Spectral Density (PSD). Denoised images with lower number of frames present unaltered Critical Dimensions (CDs), enhanced SNR (especially for low number of integration frames), and accurate measurements of uLER and uLWR, with the same accuracy as for noisy images with a consistent higher number of frames. Therefore, images with a small number of integration frames and with SNR < 2 can be successfully denoised, and advantageously used in improving metrology throughput while maintaining reliable roughness measurements for the thin resist.

Canny Algorithm Enabling Precise Offline Line Edge Roughness Acquisition in High-Resolution Lithography.

Photoresist Process Simulation to Study Line Edge Roughness

Line edge roughness analysis and simulation at advanced litho process

Process Optimization of Line Patterns in Extreme Ultraviolet Lithography Using Machine Learning and a Simulated Annealing Algorithm.

Line Edge Roughness after Development in a Positive-Tone Chemically Amplified Resist of Post-Optical Lithography Investigated by Monte Carlo Simulation and a Dissolution Model.

Analysis and Characterization of Line Edge Roughness of Nanostructures

Measurement and Calculation Method for Sub-20 Nm Line and DSA Patterns

Recognition of the Single-Side Surface and Measurmement of Line Edge Roughness

Deep learning denoiser assisted roughness measurements extraction from thin resists with low Signal-to-Noise Ratio(SNR) SEM images: analysis with SMILE

Quantitative evaluation of residual resist in electron beam lithography based on scanning electron microscopy imaging and thresholding segmentation algorithm

Simulation of Amine Concentration Dependence on Line Edge Roughness after Development in Electron Beam Lithography

LithoPW: Leveraging Visual Memory Encoding and Defect-Aware Optimization for Precise Determination of the Lithography Process Windows

Analysis Method for Nanometer-Scale Line Edge Roughness Based on Stationary Wavelet Transform

A strategy to fabricate nanostructures with sub-nanometer line edge roughness

Machine learning in electron beam lithography to boost photoresist formulation design for high-resolution patterning

Post-litho Line Edge/width Roughness Smoothing by Ion Implantations

Metrology Method of Line Edge Roughness with Nanometer Scale Precision Using Atomic Force Microscopes

Optimizing Sub-resolution Assist Features Using Test Pattern Method

Spatial analysis of line-edge roughness through scaling and fractal concepts using AFM techniques

Line-Edge Roughness from Extreme Ultraviolet Lithography to Fin-Field-Effect-Transistor: Computational Study

Optimization of Wafer Scan Image Based on Improved Canny Edge Detection