Origin of highly stable conductivity of H plasma exposed ZnO films.

Wenfeng Chen,Liping Zhu,Yaguang Li,Liang Hu,Yanmin Guo,Hongbin Xu,Zhizhen Ye
DOI: https://doi.org/10.1039/c3cp52691g
IF: 3.3
2013-01-01
Physical Chemistry Chemical Physics
Abstract:H was intentionally incorporated into as-deposited ZnO films by plasma exposure treatment. The resistivity of ZnO films was reduced to the order of 10(-3) Omega cm after H plasma treatment, and high conductive stability was identified using a post-annealing process. To find an explanation for the stable conductivity, firstprinciple calculation was performed. Results predicted that H atoms trapped in oxygen vacancies (V-O) have the lowest formation energy. By reducing oxygen vacancies in as-deposited films by adding O-2 into the working atmosphere, we further testified that H in V-O is the origin of highly stable conductivity of ZnO films. Our study provided a solution to the problem of how to incorporate H into the V-O position to produce highly stable H doped ZnO films.
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