Abstract:The demand for ZnO thin films with increased electrical conductivity and high optical transparency suitable for varieties of optoelectronic applications is rising. Aluminum doping enhances conductivity in ZnO crystallites, but adversely affects their optical transparency. Hydrogen is the optimum dopant because its negative effect on the optical properties is marginal. However, hydrogen-related safety measures necessitate utilizing costly flow control devices and observing cumbersome leak detection protocols. Here, we report depositing hydrogen-doped ZnO layers by sputtering Zn under humid oxygen plasma. The electrical conductivity of the produced ZnO layers is controlled by tuning the relative humidity of the input oxygen to the sputtering chamber. This facile method combines the growth and doping steps and can controllably increase the electrical conductivity of the grown layers up to three orders of magnitude, while causing little crystallinity and optical quality deteriorations compared to the layers grown under dry oxygen plasma. It is shown that, unlike analogous undoped ZnO layers, the electrical conductivity of our hydrogen-doped layers is independent from the intensity and frequency of the applied electric field, implying the prevalence of electronic conduction. The presence of both interstitial- and oxygen vacancy-trapped hydrogen atoms is verified; the majority of the introduced dopants assume the latter position. It is shown that both types of donners ionize at room temperature. Our work is anticipated to initiate work on the sputter deposition of other metal oxides under humid oxygen plasmas.

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