Abstract:In this paper, We prepared two groups of the glasses, the first group is Ge x As 20 Se 80-x with x from 5 % to 32.5 %, the second group is Ge x Sb 20 Se 80-x with x from 5 % to 25 %, using the conventional melt-quench method, and investigated the effect of the elemental substitution of As by Sb on the threshold behaviors in Ge x As(Sb) 20 Se 80-x glasses. We aimed to understand that,to which degree the topological model and chemical order model can explain the correlation between the physical properties and glass compositions, and how the chemical composition can affect the transition threshold in the glasses. Glass transition temperature was measured by the differential scanning calorimeter (Mettler-Toledo, DSC1) with different scanning rates from 5 K/min to 30 K/min under a uniform nitrogen gas flow of 50 mL/min, the density of the glasses was measured by a Mettler H20 balance with a MgO crystal used as a reference. Samples from each glass composition were weighed five times and the average density was recorded, the refractive index of the glass at 1.5 um was measured by a Metricon Model 2010 prism coupler. Raman spectra were measured from a T64000 Jobin-Yvon-Horiba micro-Raman spectrometer equipped with a liquid-nitrogen-cooled CCD detector. The 830 nm laser line was used as an excitation source, and the laser power was kept as small as possible to avoid any photo-induced effects. The resolution of the spectrometer was about 0.5 cm -1 . The result from systematic measurements of these physical parameters shows that, while the transition thresholds at MCN=2.4 and 2.67 were verified in the Ge-As-Se glasses with ideal covalent network, these two transitions represent the covalent network structure inside the glass from an under-constrained “floppy” network to an over-constrained “rigid” phase and from the two-dimensional to the three-dimensional “stressed rigid” phase respectively. However, when As is substituted by Sb, the Ge x Sb 20 Se 80-x glass with non-ideal covalent network will change of the transition thresholds, which changes to the chemically stoichiometric composition. We further deconvolved Raman scattering spectra into different structural units and the change of their respective intensity showed the same behavior, and this was ascribed to the chemical effect induced by a large difference of the atomic radius between As and Sb, and a relatively strong ionic feature of the element Sb.

Influence Of Bi On Topological Self-Organization In Arsenic And Germanium Selenide Networks

Study of Effects of Te Addition and Oxygen Contamination on the Surface Short Range Order Structure of GeBiSe Glass by XPS

Study on crystallization behaviors of As-Se-Bi chalcogenide glasses

Structure-Dependent Optical Properties of Self-Organized Bi2Se3 Nanostructures: from Nanocrystals to Nanoflakes.

Off‐Centering of Ge Atoms in GeBi2Te4 and Impact on Thermoelectric Performance

Atomic Distributions in Topological Insulator Bi$_2$Se$_{3-x}$Te$_x$

Stability Of The Bi2se3(111) Topological State: Electron-Phonon And Electron-Defect Scattering

Impact of Tellurium on Glass Transition and Crystallization in the Ge-Se-Te-Bi System

Crystallization Properties of Ge-Se-Bi Thermoelectric Glasses

Structural Study of Chalcogenide Glasses in the Bi5As35Se60-xTex System

Effect of Bi Additions upon the Physical Properties of Germanium Telluride Glassy Semiconductors

Density functional theory study of two-dimensional bismuth selenite: layer-dependent electronic, transport and optical properties with spin-orbit coupling.

Topological insulator in a Bi-Bi$_2$Se$_3$ infinitely adaptive superlattice phase

Band structure of Bi surfaces formed on Bi2Se3 upon exposure to air

Intrinsic Topological Insulator Bi 1.5 Sb 0.5 Te 3-x Se x Thin Crystals

Electrical, Thermal and Spectroscopic Characterization of Bulk Bi2Se3 Topological Insulator

Effect of the elemental substitution on threshold behaviours in Ge-As(Sb)-Se glasses

Atomic layer deposition and characterization of Bi1Se1 thin films

The First Principle Study: Electronic and Optical Properties in Bi2Se3

Optical and electrical characterization of BixSe1−x thin films

Temperature dependence of the Raman spectrum of orthorhombic Bi2Se3