Abstract:Future flexible electronic systems require memory devices combining low power consumption and mechanical bendability. However, high programming/erasing (P/E) voltages, which are universally required to switch the storage states in previously reported ferroelectric organic field-effect transistor (Fe-OFET) nonvolatile memories (NVMs), severely prevent their practical applications. In this work, we develop a novel route to achieve a low-voltage programmable/erasable flexible Fe-OFET NVM. Ferroelectric terpolymer poly(vinylidene-fluoride-trifluoroethylene-chlorotrifluoroethylene) [(VDF-TrFE-CTFE)], rather than the conventional ferroelectric copolymer poly(vinylidene-fluoride-trifluoroethylene) [(VDF-TrFE)], is used as the gate dielectric. The low coercive field of P(VDF-TrFE-CTFE) is the main contribution to the low-voltage operation in the Fe-OFET NVM, even with a relative thick ferroelectric gate dielectric layer. By depositing a long-chain alkane molecule Tetratetracontane (TTC) as the passivation layer on the surface of P(VDF-TrFE-CTFE) film, the layer-by-layer growth mode of semiconductor pentacene is obtained, which results in a large crystalline grain and good interface morphology at the channel/dielectric. Therefore, the mobility of Fe-OFET NVMs is greatly improved. As a result, a high performance flexible Fe-OFET NVM is achieved, with a low P/E voltage of +/- 15 V, high mobility up to 0.5 cm(2) V-1 s(-1), reliable P/E endurance property over 1000 cycles, stable data storage retention capability over 6000 s, and excellent mechanical bending durability without visible degradation after 2000 repetitive tensile bending cycles at a small curvature radius of 4.0 mm.

High-Performance Low-Voltage Organic Transistor Memories with Room-Temperature Solution-Processed Hybrid Nanolayer Dielectrics

Low Operational Voltage and High Performance Organic Field Effect Memory Transistor with Solution Processed Graphene Oxide Charge Storage Media

Excellent low-voltage operating flexible ferroelectric organic transistor nonvolatile memory with a sandwiching ultrathin ferroelectric film

Organic Field‐Effect Transistor Nonvolatile Memories with Hydroxyl‐Rich Polymer Materials As Functional Gate Dielectrics

High Performance Organic Nonvolatile Memory Transistors Based On Hfo2 And Poly(Alpha-Methylstyrene) Electret Hybrid Charge-Trapping Layers

Low-voltage Zinc Oxide Thin-Film Transistors with Solution-Processed Channel and Dielectric Layers below 150 °C

Room Temperature Fabrication of High Quality ZrO2Dielectric Films for High Performance Flexible Organic Transistor Applications

High-speed, low-voltage programmable/erasable flexible 2-bit organic transistor nonvolatile memory with a monolayer buffered ferroelectric terpolymer insulator

Achieving high mobility, low-voltage operating organic field-effect transistor nonvolatile memory by an ultraviolet-ozone treating ferroelectric terpolymer.

High Mobility Multibit Nonvolatile Memory Elements Based Organic Field Effect Transistors with Large Hysteresis

High Mobility Flexible Ferroelectric Organic Transistor Nonvolatile Memory with an Ultrathin ${\text {alo}}_{{x}}$ Interfacial Layer

Low-voltage operating flexible ferroelectric organic field-effect transistor nonvolatile memory with a vertical phase separation P(VDF-TrFE-CTFE)/PS dielectric

High-performance Flexible Organic Thin-Film Transistor Nonvolatile Memory Based on Molecular Floating-Gate and Pn-Heterojunction Channel Layer

High-performance multilevel nonvolatile organic field-effect transistor memory based on multilayer organic semiconductor heterostructures

High Performance Transparent Transistor Memory Devices Using Nano-Floating Gate of Polymer/ZnO Nanocomposites

Low-voltage Programmable/erasable High Performance Flexible Organic Transistor Nonvolatile Memory Based on a Tetratetracontane Passivated Ferroelectric Terpolymer

Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure.

Solution Processable High Quality ZrO2 Dielectric Films for Low Operation Voltage and Flexible Organic Thin Film Transistor Applications

High-Performance C60 Coupled Ferroelectric Enhanced MoS2 Nonvolatile Memory.

Organic Bistable Memory Based On Au Nanoparticle/Zno Nanorods Composite Embedded In Poly (Vinylpyrrolidone) Layer

Graphene Oxide Nanosheets Based Organic Field Effect Transistor for Nonvolatile Memory Applications