Abstract:Metal–organic framework (MOF) is an emerging important class of functional materials in the fields of information storage, wearable electronics and optoelectronic devices. The interaction of electrons or holes with MOFs is important for the systematic exploration of MOFtronics and to investigate the related structure–performance correlation. Herein, MOF flat nanosheets of copper tetrakis(4‐carboxyphenyl)porphyrin with sub‐10 nanometer scale in thickness are employed as the charge‐trapping layer in organic field‐effect floating‐gate transistor memory device fabricated by an air–liquid interfacial assembly and subsequent stamping operation. As charge trapping sites, MOF nanosheets with ultrathin nanoporous arrays significantly improve in comparison with the memory device using its counterpart ligand of tetrakis(4‐carboxyphenyl)porphyrin as the trapping elements. As compared to the reported widely applied nanofloating gate materials of gold nanoparticles, graphene, or macromolecular nanomaterials, a short pulse (≈20 ms) on the device gets a considerable memory window of ≈37.5 V at a programming voltage of ‐80 V, with a retention time longer than 104 s and good ON/OFF ratio of >103. Furthermore, the hybrid structure composed of metal and organic components endows it with electron and hole trapping capability. This work could push forward the fundamental research of organic–inorganic–hybrid electronics in future microelectronic research. The interactions of electrons or holes with metal–organic frameworks (MOFs) are important for the systematic exploration of MOFtronics and investigation of the related structure–property correlation optimization. Herein, ultrathin copper tetrakis(4‐carboxyphenyl)porphyrin nanosheets exhibit good electron and hole trapping capability superior to its ligand tetrakis(4‐carboxyphenyl)porphyrin and ranks high in current nanofloating gate materials.

Nanoparticle Floating-Gate Transistor Memory Based on Solution-Processed Ambipolar Organic Semiconductor

Nonvolatile Memory Effect in Organic Thin-Film Transistor Based on Aluminum Nanoparticle Floating Gate

Organic Field-Effect Transistor Nonvolatile Memories Based on Hybrid Nano-Floating-Gate

Conjugated Polymer Nanoparticles as Nano Floating Gate Electrets for High Performance Nonvolatile Organic Transistor Memory Devices

Organic Field-Effect Transistor Nonvolatile Memories Utilizing Sputtered C Nanoparticles As Nano-Floating-Gate

Ambipolar Nonvolatile Memory Based on A Quantum-Dot Transistor with A Nanoscale Floating Gate

Non-volatile Bipolar Transistor Memory

Hybrid Silicon–organic Nanoparticle Memory Device

Integration of Organic Insulator and Self-Assembled Gold Nanoparticles on Si MOSFET for Novel Non-Volatile Memory Cells

Molecular Floating-Gate Organic Nonvolatile Memory With A Fully Solution Processed Core Architecture

High Performance Transparent Transistor Memory Devices Using Nano-Floating Gate of Polymer/ZnO Nanocomposites

Organic Bistable Memory Based On Au Nanoparticle/Zno Nanorods Composite Embedded In Poly (Vinylpyrrolidone) Layer

Flexible organic field-effect transistor nonvolatile memory enabling bipolar charge storage by small-molecule floating gate

CHAPTER 17. Non-volatile Bipolar Transistor Memory

Transparent Organic Nonvolatile Memory and Volatile Synaptic Transistors Based on Floating Gate Structure

Synergistic effect in organic field-effect transistor nonvolatile memory utilizing bimetal nanoparticles as nano-floating-gate

Ultrathin Metal–Organic Framework Nanosheets as Nano‐Floating‐Gate for High Performance Transistor Memory Device

Non‐Volatile Organic Memory Applications Enabled by in Situ Synthesis of Gold Nanoparticles in a Self‐Assembled Block Copolymer

A flexible floating-gate based organic field-effect transistor non-volatile memory based on F8BT/PMMA integrated floating-gate/tunneling layer

Photoinduced-reset and multilevel storage transistor memories based on antimony-doped tin oxide nanoparticles floating gate

Complementary of Ferroelectric and Floating Gate Structure for High Performance Organic Nonvolatile Memory