Improved Charge-Trapping Properties of Tion/Hfon Dual Charge Storage Layer by Tapered Band Structure

L. Liu,J. P. Xu,F. Ji,J. X. Chen,P. T. Lai

DOI: https://doi.org/10.1063/1.4754830

IF: 4

2012-01-01

Applied Physics Letters

Abstract:A TiON/HfON dual charge storage layer (CSL) with tapered bandgap structure is proposed for metal-oxide–nitride-oxide–silicon-type memory by using the inter-diffusion of Ti and Hf atoms near the TiON/HfON interface to form an intermixing layer of HfxTiyON with varying Hf/Ti ratio in the dual CSL during post-deposition annealing, as confirmed by transmission electron microscopy. The memory capacitor with TiON/HfON as dual-CSL shows a large memory window of 5.0 V at ±12 V for 100 μs, improved cycling endurance with little degradation after 105 cycles and good data retention with an extrapolated 10-yr window of 4.6 V at room temperature. These are highly associated with the tapered bandgap structure and appropriate trap distribution in the dual CSL. Therefore, the TiON/HfON dual-CSL structure provides a very promising solution for future charge-trapping memory applications.