Abstract:We investigate the impact of threading dislocations with an edge component (a or a+c-type) on carrier recombination and diffusion in GaN(0001) layers close to the surface as well as in the bulk. To this end, we utilize cathodoluminescence imaging of the top surface of a GaN(0001) layer with a deeply buried (In,Ga)N quantum well. Varying the acceleration voltage of the primary electrons and comparing the signal from the layer and the quantum well enables us to probe carrier recombination at depths ranging from the close vicinity of the surface to the position of the quantum well. Our experiments are accompanied by fully three-dimensional Monte Carlo simulations of carrier drift, diffusion, and recombination in the presence of the surface, the quantum well, and the dislocation, taking into account the dislocation strain field and the resulting piezoelectric field at the dislocation outcrop. Near the surface, this field establishes an exciton dead zone around the dislocation, the extent of which is not related to the carrier diffusion length. However, reliable values of the carrier diffusion length can be extracted from the dipole-like energy shift observed in hyperspectral cathodoluminescence maps recorded around the dislocation outcrop at low acceleration voltages. For high acceleration voltages, allowing us to probe a depth where carrier recombination is unaffected by surface effects, we observe a much stronger contrast than expected from the piezoelectric field alone. This finding provides unambiguous experimental evidence for the strong nonradiative activity of edge threading dislocations in bulk GaN and hence also in buried heterostructures.

Local Ultra-Violet Surface Photovoltage Spectroscopy of Single Thread Dislocations in Gallium Nitrides by Kelvin Probe Force Microscopy

Carrier diffusion in GaN -- a cathodoluminescence study. III: Nature of nonradiative recombination at threading dislocations

Determination of the carrier diffusion length in GaN from cathodoluminescence maps around threading dislocations: fallacies and opportunities

X‐Ray Diffraction Microstrain Analysis for Extraction of Threading Dislocation Density of GaN Films Grown on Silicon, Sapphire, and SiC Substrates

Direct Measurement for Nanoscale Vertical Carrier Diffusion on Semiconductor Surface—an Approach Toward Scanning Diffusion Microscopy

Dislocation luminescence in GaN single crystals under nanoindentation

Electronic and Optical Properties of Threading Dislocations in n-Type 4H-SiC

Effect of Dislocations on Electrical and Optical Properties of N-Type Al0.34Ga0.66N

Probing local emission properties in InGaN/GaN quantum wells by scanning tunneling luminescence microscopy

Application of multiphoton photoluminescence in characterization of GaN dislocations

Single-dislocation ultraviolet light emission

Nano-indentation Study of Dislocation Evolution in GaN-based Laser Diodes

Piezoelectric field, exciton lifetime, and cathodoluminescence intensity at threading dislocations in GaN{0001}

Cathodoluminescence Study on the Impurity Behaviors at Threading Dislocations in GaN

Single-atom-resolved vibrational spectroscopy of a dislocation

Direct assessment of p-n junctions in single GaN nanowires by Kelvin probe force microscopy

Nanoscale phase separation on an AlGaN surface characterized by scanning diffusion microscopy

High-resolution X-ray Diffraction Analysis on HVPE-grown Thick GaN Layers

Threading Dislocations Related Persistent Photoconductivity Effect in Hydride Vapor Phase Epitaxy Grown Gan Epilayers

Influence of Different Types of Threading Dislocations on the Carrier Mobility and Photoluminescence in Epitaxial Gan

Cathodoluminescene Study of Mg Implanted GaN: the Impact of Dislocation on Mg Diffusion