Abstract:The quest for higher modulation speed and lower energy consumption has inevitably promoted the rapid development of semiconductor-based solid lighting devices in recent years. GaN-based light-emitting diodes (LEDs) have emerged as promising candidates for achieving high efficiency and high intensity, and have received increasing attention among many researchers in this field. In this paper, we use a self-assembled array-patterned mask to fabricate InGaN/GaN multi-quantum well (MQW) LEDs with the intention of enhancing the light-emitting efficiency. By utilizing inductively coupled plasma etching with a self-assembled Ni cluster as the mask, nanopillar arrays are formed on the surface of the InGaN/GaN MQWs. We then observe the structure of the nanopillars and find that the V-defects on the surface of the conventional structure and the negative effects of threading dislocation are effectively reduced. Simultaneously, we make a comparison of the photoluminescence (PL) spectrum between the conventional structure and the nanopillar arrays, achieved under an experimental set-up with an excitation wavelength of 325 mm. The analysis demonstrates that MQW-LEDs with nanopillar arrays achieve a PL intensity 2.7 times that of conventional LEDs. In response to the PL spectrum, some reasons are proposed for the enhancement in the light-emitting efficiency as follows: 1) the improvement in crystal quality, namely the reduction in V-defects; 2) the roughened surface effect on the expansion of the critical angle and the attenuated total reflection; and 3) the enhancement of the light-extraction efficiency due to forward scattering by surface plasmon polariton modes in Ni particles deposited above the p-type GaN layer at the top of the nanopillars.

Enhancement of Light Extracting from Gan-Based Blue Light Emitting Diodes Using Photonic Crystal

Enhanced Light Extraction from a GaN-based Green Light-Emitting Diode with Hemicylindrical Linear Grating Structure.

Improvement of Light Extraction Efficiency in GaN-based Light-Emitting Diodes by Addition of Complex Photonic Crystal Structure

Enhanced Light Extraction of InGaN LEDs with Photonic Crystals Grown on P-Gan Using Selective-Area Epitaxy and Nanospherical-Lens Photolithography

Ultra High Luminous Efficiency P-Type Surface Defect Structure GaN LED

Enhanced Output Power of Light-Emitting Diodes with Embedded Air-Gap Photonic Crystals by Nanosphere Lithography

Highly Enhanced Luminescence Performance of LEDs Via Controllable Layer‐Structured 3D Photonic Crystals and Photonic Crystal Beads

Studies Of Improving Light Extraction Efficiency Of High Power Blue Light-Emitting Diode By Photo-Enhanced Chemical Etching

High-output power GaN-LED based on surface plasmon enhancement

Size-controllable Nanopyramids Photonic Crystal Selectively Grown on P-Gan for Enhanced Light-Extraction of Light-Emitting Diodes.

Photonic Crystal Light Emitting Diode

Light Extraction Improvement of Gan Leds Using Nano-Scale Top Transmission Gratings

Effects of Symmetry of GaN-based Two-Dimensional Photonic Crystal with Quasicrystal Lattices on Enhancement of Surface Light Extraction

Enhancement of the Light Output of Light-Emitting Diode with Double Photonic Crystals

Efficiency improvement and droop behavior in nanospherical-lens lithographically patterned bottom and top photonic crystal InGaN/GaN light-emitting diodes.

Analysis of the Light Extraction Efficiency of Light-Emitting Diodes with Photonic Crystals Combined with the Generalized Rouard Method.

Enhancement of Light Output Power from LEDs Based on Monolayer Colloidal Crystal

Light extraction enhancement of light-emitting diodes by nanopillar hierarchical structures

Light Extraction Improvement of InGaN Light-Emitting Diodes with Large-Area Highly Ordered ITO Nanobowls Photonic Crystal Via Self-Assembled Nanosphere Lithography

The Enhancement of Light-Emitting Efficiency Using GaN-based Multiple Quantum Well Light-Emitting Diodes with Nanopillar Arrays

GaN-based light-emitting diodes with photonic crystals structures fabricated by porous anodic alumina template.