Abstract:As an emerging material, graphene has attracted vast interest in solid-state physics, materials science, nanoelectronics and bioscience. Graphene has zero bandgap with its valence and conduction bands are cone-shaped and meet at the K points of the Brillouin zone. Due to its high intrinsic carrier mobility, large saturation velocity, and high on state current density, graphene is also considered as a promising candidate for high-frequency devices. To improve the reliability of graphene FETs, which include shifting the Dirac point voltage toward zero, increasing the channel mobility and decreasing the source/drain contact resistance, we optimized the device fabrication process. For CVD grown graphene, the film transfer and the device fabrication processes may produce interfacial states between graphene and the substrate and make graphene p or n-type, which shift the fermi level far away from the Dirac point. We have found that after graphene film transfer, an annealing process at 400°C under N2 ambient will shift Dirac point toward zero gate voltage. Ti/Au, Ni, and Ti/Pd/Au source/drain structures have been studied to minimize the contact resistance. According to the measured data, Ti/Pd/Au structure gives the lowest contact resistance (∼500ohmμm). By controlling the process of graphene growth, transfer and device fabrication, we have achieved graphene FETs with a field effective mobility of 16,000cm2/Vs after subtraction of contact resistance. The contact resistivity was estimated in the range of 1.1×10−6Ωcm2 to 8.8×10−6Ωcm2, which is close to state of the art III–V technology. The maximum transconductance was found to be 280mS/mm at VD=0.5V, which is the highest value among CVD graphene FETs published to date.

Quantitative Analysis of the Role of the First Layer in P‐ and N‐type Organic Field‐Effect Transistors with Graphene Electrodes

Understanding asymmetric transfer characteristics and hysteresis behaviors in graphene devices under different chemical atmospheres

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Epitaxially Grown Graphene Field-Effect Transistors with Electron Mobility Exceeding 1500 Cm2/vs and Hole Mobility Exceeding 3400 Cm2/vs

Linear conduction in N-type organic field effect transistors with nanometric channel lengths and graphene as electrodes

H/O Edge Passivated B/N Co-Doped Armchair Graphene Nanoribbon Field-Effect Transistors, Based on First Principles.

Quantitative Analysis of Graphene Doping by Organic Molecular Charge Transfer

Patterned Graphene As Source/Drain Electrodes for Bottom‐Contact Organic Field‐Effect Transistors

&Lt;inline-Formula> &Lt;tex-Math Notation="tex">${\rm MoS}_{2}$ &Lt;/tex-Math></inline-formula> Field-Effect Transistors with Graphene/Metal Heterocontacts

Contrasting Transport Performance of Electron- and Hole-Doped Epitaxial Graphene for Quantum Resistance Metrology

Tunable Transport Characteristics of Double-Gated Graphene Field-Effect Transistors Using P(VDF-TrFE) Ferroelectric Gating

High-performance monolayer MoS2 field-effect transistor with large-scale nitrogen-doped graphene electrodes for Ohmic contact

Field‐effect Thermoelectric Hotspot in Monolayer Graphene Transistor

Intrinsic Current-Voltage Characteristics of Graphene Nanoribbon Transistors and Effect of Edge Doping.

Optimizing the fabrication process for high performance graphene field effect transistors.

Field Effect Transistors Based on in Situ Fabricated Graphene Scaffold–ZrO2 Nanofilms

Performance limits exploration of sub-5 nm monolayer germanane transistors: A first-principle quantum transport simulation

Tuning Graphene Nanoribbon Field Effect Transistors Via Controlling Doping Level

High-Performance Photoresponsive Organic Nanotransistors with Single-Layer Graphenes as Two-Dimensional Electrodes

Effect of Different Positions of Gate Electrode on the Electronic Transport Properties of Organic Molecular Field-effect Transistors

N‐type Dirac‐Source Field‐Effect Transistors Based on a Graphene/Carbon Nanotube Heterojunction