Abstract:Topological electronic phases exist in a variety of naturally occurring materials but can also be created artificially. We used a cryogenic scanning tunneling microscope to create dimerized chains of identical quantum dots on a semiconductor surface and to demonstrate that these chains give rise to one-dimensional topological phases. The dots were assembled from charged adatoms, creating a confining potential with single-atom precision acting on electrons in surface states of the semiconductor. Quantum coupling between the dots leads to electronic states localized at the ends of the chains, as well as at deliberately created internal domain walls, in agreement with the predictions of the Su-Schrieffer-Heeger model. Scanning tunneling spectroscopy also reveals deviations from this well-established model manifested in an asymmetric level spectrum and energy shifts of the boundary states. The deviations arise because the dots are charged and hence lead to an onsite potential that varies along the chain. We show that this variation can be mitigated by electrostatic gating using auxiliary charged adatoms, enabling fine-tuning of the boundary states and control of their quantum superposition. The experimental data, which are complemented by theoretical modeling of the potential and the resulting eigenstates, reveal the important role of electrostatics in these engineered quantum structures.

Ordered Quantum-Ring Chains Grown on a Quantum-Dot Superlattice Template

Laterally Aligned Quantum Rings: from One-Dimensional Chains to Two-Dimensional Arrays

Carrier Transfer in Vertically Stacked Quantum Ring-Quantum Dot Chains

Regrowth Dynamics of InAs Quantum Dots on the GaAs Circular Mesa

Lateral and Vertical Ordered One-Dimensional Ingaas/Gaas Quantum Structures

Formation of GaAs Double Rings Through Gallium Migration and Nanodrilling

Formation of Laterally Ordered Quantum Dot Molecules by in Situ Nanosecond Laser Interference

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Unveiling the morphology of buried In(Ga)As nanostructures by selective wet chemical etching: From quantum dots to quantum rings

Topological boundary states in engineered quantum-dot molecules on the InAs(111)A surface

Phase Diagrams for Growing Ordered Heteroepitaxial Quantum Dots and Quantum Rings by Surface Prepatterning

Self-Assembled Sige Quantum Rings Grown on Si(001) by Molecular Beam Epitaxy

Fabrication of quantum dot and ring arrays by direct laser interference patterning for nanophotonics

Control of complex quantum structures in droplet epitaxy

Atomic Ordering in Self-Assembled Epitaxial Ii-Vi and Iv-Vi Compound Semiconductor Quantum Dot Systems

Formation of InAs Self-Assembled Quantum Rings on InP

Ingaas/Gaas Three-Dimensionally-Ordered Array of Quantum Dots

Ordered GaAs quantum dots by droplet epitaxy using in situ direct laser interference patterning

Directed Self-Assembly of InAs Quantum Dots Using in Situ Interference Lithography

Study on the mechanism of ordering growth InAs/InP quantum dots by introducing tensile strained GaAs layer

Topological States in Dimerized Quantum-Dot Chains Created by Atom Manipulation