Microstructure and thermoelectric properties of CoSb 2.75Ge 0.25-xTe x prepared by rapid solidification

Xianli Su,Han Li,Yonggao Yan,Guoyu Wang,Hang Chi,Xiaoyuan Zhou,Xinfeng Tang,Qingjie Zhang,Ctirad Uher
DOI: https://doi.org/10.1016/j.actamat.2012.02.034
IF: 9.4
2012-01-01
Acta Materialia
Abstract:Since the vibration modes of the pnicogen rings in CoSb3-based skutterudites fall within the range of frequencies of heat-carrying phonons, disruption of the rings by doping should have a strong influence on heat transport in this material. To test the premise, single-phase double-doped CoSb2.75Ge0.25−xTex (x=0.125–0.20) compounds were synthesized by combining melt spinning with a spark plasma sintering method. Following the melt-spinning process, the side of the ribbons contacting the copper drum is featureless and reflects its amorphous nature while the free surface of the ribbons is composed of 30–80nm grains. After spark plasma processing the average grain size of the bulk samples is about 200nm. High-resolution transmission electron microscopy images show an in situ nanostructure consisting of circular, 15nm diameter dots of Te- and Ge-enriched skutterudite phase embedded in the skutterudite matrix. Transport properties were measured from 2 to 800K as a function of Te and Ge content on the pnicogen (Sb) rings and the results were correlated with the structural data. Double-doping on pnicogen rings with Ge and Te, and using melt-spinning processing, results in binary skutterudite compounds that possess an impressive figure of merit of ZT∼1.1 at 750K.
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