Low Temperature Growth of VO2 Film and Giant Modulation to Terahertz Transmission

Dan-Dan Sun,Qi-Ye Wen

DOI: https://doi.org/10.1364/ltst.2012.sth6b.4

2012-01-01

Abstract:High quality VO2 thin films were fabricated on BK7 substrate. A distinct semiconductor-metal phase transition was obtained, accompanying by a resistivity change of 4 orders of magnitude and a terahertz transmission modulation about 89%.

What problem does this paper attempt to address?

VO2 Low Temperature Deposition and Terahertz Transmission Modulation

Sun Dan-Dan,Chen Zhi,Wen Qi-Ye,Qiu Dong-Hong,Lai Wei-En,Dong Kai,Zhao Bi-Hui,Zhang Huai-Wu

DOI: https://doi.org/10.7498/aps.62.017202

2013-01-01

Abstract:Recently, the applications of vanadium dioxide film (VO2) in terahertz functional devices have attracted much attention because VO2 has a remarkable response to THz wave, In this work BK7 glass a material highly transparent to both THz and optical band is adopted as a substrate. High-quality VO2 film is deposited on a BK7 substrate using low temperature magnetron sputtering technology. The crystallinity and microstructure of the thin film are investigated by X-ray diffraction and atomic force microscopy. The results indicate that the as-deposited film crystallizes directly into single-phase VO2 with (011) preferred orientation and compact nanostructure. Under a heating-cooling cycle, the film undergos a metal-insulator transition with an abrupt resistivity change reaching more than 4 orders of magnitude. Terahertz transmission modulation is characterized by terahertz time domain spectrum, and a giant modulation depth of 89% is obtained. Due to the high transparence and the huge modulation effect, the VO2/BK7 can be widely used for THz devices such as modulators and switches.
Terahertz Transmission Properties of Vanadium Dioxide Films Deposited on Gold Grating Structure with Different Periods

Min Gao,Xu Wang,Shengxian Luo,Qingjian Lu,Sheng-Nian Luo,Chang Lu,Sihong Chen,Fei Long,Yuan Lin

DOI: https://doi.org/10.1088/2053-1591/ab8e71

IF: 2.025

2020-01-01

Materials Research Express

Abstract:Vanadium dioxide (VO2) is a typical thermal induced phase transition material, exhibiting a transition from metallic phase at high temperature to insulating phase at low temperature, which is also accompanied by a conductivity change of over several orders of magnitude. The transition property makes VO2 prominent to achieve an effective degree of control of terahertz (THz) wave. In this paper, composite films consisting of metal grating with different periods and VO2 film were prepared by polymer assisted deposition method. Although the conductivity change of VO2 films deposited on gold grating structure across phase transition was declined to about two orders of magnitude, the amplitude modulation depth of THz of the composite films can still reach a high value. Furthermore, it was found that the THz modulation depth was related with the grating period. According to theoretical simulation, the fluctuation height of VO2 films, caused by metal grating structure during growth, can be used to regulate THz wave. These results demonstrate an economic and unsophisticated method to fabricate VO2 films with thickness fluctuation structure and then tune the THz waves.
Ultrafast and Broadband Terahertz Switching Based on Photo-Induced Phase Transition in Vanadium Dioxide Films

Chen Zhi,Wen Qi-Ye,Dong Kai,Sun Dan-Dan,Qiu Dong-Hong,Zhang Huai-Wu

DOI: https://doi.org/10.1088/0256-307x/30/1/017102

2013-01-01

Chinese Physics Letters

Abstract:Single-phase VO2 thin films are sputtering deposited on BK7 substrates, and sharp insulator-to-metal phase transition is obtained with a resistivity change of four orders of magnitude. Terahertz (THz) pump-probe measurements reveal that by illuminating the films with a low pumping power of 143 μJ/cm2, VO2 films exhibit an ultrafast optical switching to THz transmission within 8 ps. Furthermore, the THz switching ratio reaches over 80% in a wide frequency range from 0.3 to 2.5 THz. All these outstanding features indicate a strong potential of VO2 films for broadband terahertz wave switching and modulation applications.
For Progress in Natural Science: Materials International Investigations of Structural Phase Transformation and THz Properties Across Metal–insulator Transition in VO2/Al2O3 Epitaxial Films

Mengmeng Yang,Yuanjun Yang,Liangxin Wang,Bin Hong,Haoliang Huang,Xiang Hu,Yi Zhao,Yongqi Dong,Xiaoguang Li,Yalin Lu,Jun Bao,Zhenlin Luo,Chen Gao

DOI: https://doi.org/10.1016/j.pnsc.2015.09.003

IF: 4.269

2015-01-01

Progress in Natural Science Materials International

Abstract:Vanadium dioxide (VO2) epitaxial thin films on (0001)-oriented Al2O3 substrates were prepared using radio frequency (RF) magnetron sputtering techniques. To study the metal-insulator-transition (MIT) mechanism and extend the applications of VO2 epitaxial films at terahertz (THz) band, temperature-dependent X-ray diffraction (XRD) and THz time domain spectroscopy of the VO2 epitaxial films were performed. Both the lattice constants and THz transmission exhibited a similar and sharp transition that was similar to that observed for the electrical resistance. Consequently, the MIT of the VO2/Al2O3 epitaxial films should be co-triggered by the structural phase transition and electronic transition. Moreover, the very large resistance change (on the order of ~103) and THz response (with a transmission modulation ratio of ~87%) in the VO2/Al2O3 epitaxial heterostructures are promising for electrical switch and electro-optical device applications.
THz Modulation Performance of VO2 Film Grown on Al2O3/Si Substrate

Ying Xiong,Qiye Wen,Zhi Chen,Qinghui Yang,Huaiwu Zhang

2014-01-01

Abstract:High quality VO2 thin film was successfully deposited on Si substrate with Al2O3 as a buffer layer. The electrical and optical performance of the film was great enhanced. Reflective terahertz modulation is characterized and the modulation amplitude of 55% is obtained. The VO2-on-Si buffered by Al2O3 can be widely used for THz devices.
Semiconductor-metal transition in thin VO2 films grown by ozone based atomic layer deposition

Geert Rampelberg,Marc Schaekers,Koen Martens,Qi Xie,Davy Deduytsche,Bob De Schutter,Nicolas Blasco,Jorge Kittl,Christophe Detavernier

DOI: https://doi.org/10.1063/1.3579195

IF: 4

2011-04-18

Applied Physics Letters

Abstract:Thin films of vanadium dioxide (VO2) have been grown by a low temperature atomic layer deposition process at 150 °C using tetrakis[ethylmethylamino]vanadium as a vanadium source and ozone as reactant gas. Films deposited on SiO2 were amorphous, but during a thermal treatment at 450 °C tetragonal VO2(R) was formed. During in situ x-ray diffraction measurements, the semiconductor–metal transition was observed as a reversible transition between VO2(M1) and VO2(R) near 67 °C. Correlated with this phase change, a reversible change in resistivity was observed of more than two orders of magnitude for a film of 42 nm thickness.

physics, applied
Low Temperature Fabrication of High-Performance VO2 Film Via Embedding Low Vanadium Buffer Layer

Zihao Xiang,Zhiming Wu,Chunhui Ji,Yuanlin Shi,Inhong Dai,Zhangying Huang,Wen Xu,Xiang Dong,Jun Wang,Yadong Jiang

DOI: https://doi.org/10.1016/j.apsusc.2020.146101

IF: 6.7

2020-01-01

Applied Surface Science

Abstract:Vanadium dioxide (VO2), which can initiate an automatic reversible metal-to-insulator transition (MIT) from tetragonal to monoclinic structure at the transition temperature (Tc) of 68 degrees C, is a promising candidate to realize electronic devices due to its dramatic changes in electrical resistivity through MIT. Moreover, the application of VO2 on modulation devices requires a narrow hysteresis width associated with a significant change in its electronic properties, which is quite challenging in VO2 films fabricated by magnetron sputtering, besides, the high preparation temperature around 400 degrees C also hinders the further industrial production of VO2 films. In this paper, by adding a simple and easy-to-obtain low-valence vanadium buffer layer between the substrate and the VO2 layer, high performance VO2 films with electrical phase transition close to four orders of magnitude and loop width less than 5 degrees C are obtained. Meanwhile, the annealing temperature of the fabricating process is decreased to only 320 degrees C, which is 80 degrees C lower than the ordinary preparation temperature and significantly reducing energy consumption and manufacturing difficulty. Such enhanced performance will benefit the publicity and application for VO2-based modulation devices.
Broadband THz modulation characteristics of vanadium dioxide thin film prepared on glass substrate

Chen Chen,Zhenfei Luo,Yadong Jiang,Zhiming Wu,Qinglong Meng,Cunbang Yang,Xun Zhou,Bin Zhang

DOI: https://doi.org/10.11884/HPLPB201628.023104

2016-01-01

Abstract:For the applications of vanadium dioxide (VO 2 )thin film in terahertz tunable functional devices,the vanadium dioxide VO 2 thin film was prepared by magnetron sputtering technique on K9 glass substrate,and the crystal structure was char-acterized by X-ray diffraction (XRD).Spectral characteristics and their variations of terahertz (THz)reflection and transmission signal passing through the sample at different temperatures were studied by the THz time domain spectroscopy system (THz-TDS)equipped with heating device.The experimental results indicated that the semiconductor-metal transition of VO 2 thin film occurred with the increase of the heating temperature and showed excellent modulation to the broadband THz wave.The modula-tion depth was dependent on the THz frequency.The THz wave amplitude modulation depth of reflection power and transmission showed remarkable fluctuation in the band of 0.3-0.5 THz.The transmittance of THz wave was larger in the low frequency band than that in the high frequency band,and the modulation depth varied in the range of 35%-65%.The thin film was prepared sim-ply and had high quality,which can be applied to THz modulator functions such as devices and switches.
Electrically-driven metal-insulator transition of VO2 thin films in a nanoscale metal-oxide-metal device structure

Dong-Hong Qiu,Qi-Ye Wen,Qing-Hui Yang,Zhi Chen

DOI: https://doi.org/10.1109/UCMMT.2013.6641563

2013-01-01

Abstract:We report the growth of vanadium dioxide (VO2) films on metal electrode with a thin SiO2 buffer and the fabrication of nanoscale metal-oxide-metal junction. The thermal-induced metal-insulator transition with a change of resistance of 2 orders of magnitude is observed and the threshold voltage is as low as 1.6V.
Low pressure thermal annealed fabrication of VO2 on glass with excellent optical properties

Jinshi Zhao,Jiacheng Li,Chenyang Hao,Qiuyang Li,Wei Mi,Xiaoyong Qiang,Liwei Zhou

DOI: https://doi.org/10.1016/j.mssp.2021.105658

IF: 4.1

2021-05-01

Materials Science in Semiconductor Processing

Abstract:In this study, VO2 was deposited on glass through low pressure annealed metal vanadium thin film. The crystal structure, surface morphology and optical transmittance property of the film were characterized by X-ray diffraction, scanning electron microscopy and UV/VIS/NIR spectrophotometer, respectively. When the film thickness is higher than 88 nm, XRD showed that the deposited films appears only at 27.92° indexed to VO2 (011). The calculated grain sizes of VO2 increased from 33.6 nm to 39.2 nm with the increasing of film thickness. The thermal hysteresis showed that the phase transition temperature is in a range of 53–58 °C, which is much lower than that of single crystal VO2 (68 °C). In addition, the films exhibit the optimal thermochromic performance with the luminous transmittance of 48.2% and the solar modulation of 6.7%. This method revealed the facile fabrication of large scale high performance VO2 on glass for thermochromic based devices.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Dynamic Manipulation of THz Waves Enabled by Phase-Transition VO2 Thin Film

Chang Lu,Qingjian Lu,Min Gao,Yuan Lin

DOI: https://doi.org/10.3390/nano11010114

IF: 5.3

2021-01-06

Nanomaterials

Abstract:The reversible and multi-stimuli responsive insulator-metal transition of VO2, which enables dynamic modulation over the terahertz (THz) regime, has attracted plenty of attention for its potential applications in versatile active THz devices. Moreover, the investigation into the growth mechanism of VO2 films has led to improved film processing, more capable modulation and enhanced device compatibility into diverse THz applications. THz devices with VO2 as the key components exhibit remarkable response to external stimuli, which is not only applicable in THz modulators but also in rewritable optical memories by virtue of the intrinsic hysteresis behaviour of VO2. Depending on the predesigned device structure, the insulator-metal transition (IMT) of VO2 component can be controlled through thermal, electrical or optical methods. Recent research has paid special attention to the ultrafast modulation phenomenon observed in the photoinduced IMT, enabled by an intense femtosecond laser (fs laser) which supports “quasi-simultaneous” IMT within 1 ps. This progress report reviews the current state of the field, focusing on the material nature that gives rise to the modulation-allowed IMT for THz applications. An overview is presented of numerous IMT stimuli approaches with special emphasis on the underlying physical mechanisms. Subsequently, active manipulation of THz waves through pure VO2 film and VO2 hybrid metamaterials is surveyed, highlighting that VO2 can provide active modulation for a wide variety of applications. Finally, the common characteristics and future development directions of VO2-based tuneable THz devices are discussed.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Optimization of Metal-to-insulator Phase Transition Properties in Polycrystalline VO2 Films for Terahertz Modulation Applications by Doping

Chunhui Ji,Zhiming Wu,Xuefei Wu,Haoqian Feng,Jun Wang,Zehua Huang,Hongxi Zhou,Wei Yao,Jun Gou,Yadong Jiang

DOI: https://doi.org/10.1039/c7tc05536f

IF: 6.4

2018-01-01

Journal of Materials Chemistry C

Abstract:A low TC and small ΔH were successfully achieved without significantly impairing THz MD by doping through an appropriate annealing process.
VO$_2$ films grown on TiO$_2$ sub-layer: influence of thickness on structural, electrical and optical properties

M. E. Kutepov,V. E. Kaydashev,D.V. Stryukov,A.S. Konstantinov,A.V. Nikolskiy,A.T. Kozakov,A.D. Morozov,E. M. Kaidashev

2024-11-22

Abstract:Vanadium dioxide with metal-to-insulator transition (MIT) that is triggered by heat, current or light is a promising material for modern active THz/mid-IR metasurfaces and all-optical big data processing systems. Multilayer VO$_2$-based active metasurfaces are urgently needed however several important issues related to VO$_2$ properties in VO$_2$/TiO$_2$/Al$_2$O$_3$ films should be thoroughly examined first. We study electrical, optical and structural properties of VO$_2$ films as well as their composition and switching characteristics as function of the VO$_2$ layer thickness in VO$_2$/TiO$_2$ composites. XRD analysis revealed an epitaxial growth of films with deformation of the monoclinic VO$_2$ lattice to hexagonal symmetry. Reduced VO$_2$ layer thickness from 170 nm to 20 nm results in increased phase transition temperature while the width of the resistance versus temperature hysteresis loop R(T) remains constant at ~6C for all VO$_2$ thicknesses in the range of 20-170 nm. The resistance alteration ratio is reduced from 4.2e3 to 2.7e2 in thinner films. Raman spectra reveal a significant shift of VO$_2$ lattice vibration modes for films thinner than 30 nm claiming a great structural strain whereas modes position for thicker VO$_2$ layers are similar to those in bulk structure. Composition of VO$_2$ films has revealed only a minor alteration of VO$_2$/V$_2$O$_5$ phases ratio from 1.6 to 1.8 when the film thickness has been increased from 20 nm to 50 nm. Investigation of surface elemental composition and valence states of VO$_2$ films revealed that VO$_2$/V$_2$O$_5$ ratio remains practically unchanged with thickness reduction. The study of electrical MIT dynamics revealed the switching time of a 50 nm VO$_2$ film to be as low as 800 ns.

Materials Science,Optics
Fabrication and Electrical Properties of Pure VO2 Phase Films

B. G. Chae,D. H. Youn,H. T. Kim,S. Y. Maeng,K. Y. Kang

DOI: https://doi.org/10.48550/arXiv.cond-mat/0311616

2003-11-29

Abstract:We have grown VO2 thin films by laser ablation for electronic device applications. In obtaining the thin films of the pure VO2 phase, oxygen partial pressure is a critical parameter because vanadium oxides have several phases with the oxygen concentration. It is found that the pure VO2 films are epitaxially grown on Al2O3 substrate in the narrow ranges of 55-60 mTorr in an Ar+10% O2 ambient, and that the mixed phase films are synthesized when the deposition pressure slightly deviates from the optimum pressure. The (100) oriented VO2 films undergo an abrupt metal-insulator transition (MIT) with resistance change of an order of 104 at 338K. In the films of mixed phases, the small change of the resistance is observed at the same temperature. The polycrystalline films grown on SiO2/Si substrate undergo a broaden MIT of the resistance. Furthermore, the abrupt MIT and collective current motion appearing in metal are observed when the electric field is applied to the film.

Materials Science
Synthesis of Vanadium Dioxide Thin Films on Conducting Oxides and Metal–insulator Transition Characteristics

Yanjie Cui,Xinwei Wang,You Zhou,Roy Gordon,Shriram Ramanathan

DOI: https://doi.org/10.1016/j.jcrysgro.2011.10.025

IF: 1.8

2011-01-01

Journal of Crystal Growth

Abstract:We report on growth and physical properties of vanadium dioxide (VO2) films on model conducting oxide underlayers (Nb-doped SrTiO3 and RuO2 buffered TiO2 single crystals). The VO2 films, synthesized by rf sputtering, are highly textured as seen from X-ray diffraction. The VO2 film grown on Nb doped SrTiO3 shows over two orders of magnitude metal–insulator transition, while VO2 film on RuO2 buffered TiO2 shows a smaller resistance change but with an interesting two step transition. X-ray photoelectron spectroscopy has been performed as a function of depth on both sets of structures to provide mechanistic understanding of the transition characteristics. We then investigate voltage-driven transition in the VO2 films grown on Nb-doped SrTiO3 substrate as a function of temperature. The present study contributes to efforts towards correlated oxide electronics utilizing phase transitions.
Temperature-dependent Optical Characterization of VO2 Thin Film Prepared from Furnace Oxidation Method

Sydney Taylor,Jeremy Chao,Linshuang Long,Niko Vlastos,Liping Wang

DOI: https://doi.org/10.30919/esmm5f607

2019-01-01

Abstract:Thermochromic vanadium dioxide (VO ) thin films have been deposited on quartz substrates via a two-step furnace oxidation method.First pure 2 metallic vanadium thin films are deposited on quartz substrates using electron beam evaporation.Then the vanadium films are oxidized in an atmospheric tube furnace to produce stoichiometric VO .X-ray diffraction measurements confirm the composition of the prepared films.Temperature-2 dependent spectral transmittance measurements within the optical range reveal a 57% change upon transition at a wavelength of λ = 2.5 µm, indicating good potential for energy applications.The heating and cooling behaviors of the VO thin films on quartz are also investigated, and the VO transitions 2 2from an insulator to a metal at 345 K upon heating.There is approximately 20 K of hysteresis between the heating and cooling curves.The dielectric constants of the furnace oxidized VO for both the insulating and metallic phases are fitted to a dispersion model for the visible and near-infrared regime.2 Excellent thermal stability of the fabricated VO thin film from cryogenic to high temperatures is shown with in-situ optical measurements.2 RESEARCH PAPER 2 transition temperature, transition width, and hysteresis characteristics of the fabricated VO thin films.Models of the dielectric constants in the 2 visible and near-IR regimes are presented for VO at both the insulating 2 and metallic phases.Finally, the optical behavior of the VO at 2 cryogenic and high temperatures is investigated to elucidate the thermal stability of the fabricated films.This furnace oxidization technique along with the optical property models will be useful for developing VO 2
Growth of Vanadium Dioxide Thin Films on Pt Metal Film and the Electrically-Driven Metal-Insulator Transition Characteristics of Them

Qiu Dong-Hong,Wen Qi-Ye,Yang Qing-Hui,Chen Zhi,Jing Yu-Lan,Zhang Huai-Wu

DOI: https://doi.org/10.7498/aps.62.217201

IF: 0.906

2013-01-01

Acta Physica Sinica

Abstract:High-quality VO2 thin films are deposited on the metal platinum (Pt) electrode buffered by silicon dioxide (SiO2) using radio frequency magnetron sputtering. The effect of the thickness of SiO2 on the the crystal structure, morphology and metal-insulator transition (MIT) performance of the films are discussed. Results show that SiO2 buffer layer with a thickness of 0.2 μm can effectively eliminate huge stress between the VO2 film and the metal film; and the VO2 thin film with the distinct MIT are deposited. When the buffer layer reaches more than 0.7 μm, the VO2 film has a distinct (011) preferred orientation, the smooth surface and compact nanostructure, and the resistance change reaches more than three orders of magnitude. At the same time, Pt-SiO2/VO2-Au sandwiched structure is achieved to test the current versus voltage curves, in which can be seen several distinct steps of current caused by the voltage perpendicular to the plane of a VO2 film. The result confirms the electrically-driven metal-insulator transition. Due to the high-quality VO2 and the flexible device structure, the VO2/Pt-SiO2 can be widely used for large-scale integrated electronic control devices.
Growth of ultra thin vanadium dioxide thin films using magnetron sputtering

Fangfang Song,B. E. White Jr

DOI: https://doi.org/10.48550/arXiv.1608.03911

2016-08-13

Abstract:In this work, the results of fabricating ultra thin VO$_2$ films on the technologically relevant amorphous SiO$_2$ surface using reactive DC magnetron sputtering are presented. Results indicate that a post deposition anneal in low partial pressures of oxygen is an effective way at stabilizing the VO$_2$(M$_{1}$) phase on the SiO$_2$ surface. VO$_2$ films with a thickness of 42nm show a continuous microstructure, and undergo a resistivity change of more than a factor of 200 as the temperature of the film increases above 72$^{o}C$. The film shows hysteresis in the metal-insulator transition temperature upon heating and cooling with a width of approximately 8$^o$C. The resistivity of the low temperature semiconducting phase is found to be thermally activated with an activation energy 0.16$\pm$0.03 $ev$. Stress measurements using X-ray diffraction indicate that the ultra thin VO$_2$ film has a large tensile stress of 2.0$\pm$0.2 $GPa$. This value agrees well with the calculated thermal stress due to differential thermal expansion between the VO$_2$ thin film and silicon substrate. The stress leads to a shift of the metal-insulator transition temperature by approximately 4$^{o}C$.

Materials Science
Amorphous VO$_x$ films with high temperature coefficient of the resistivity grown by reactive e-beam evaporation of V metal

E.V. Tarkaeva,V.A. Ievleva,A.I. Duleba,A. V. Muratov,A.Yu. Kuntsevich

2023-09-13

Abstract:Amorphous VO$_x$ films without a hysteretic phase transition are stable with respect to thermal cycling and highly demanded as sensitive elements of the resistive thermometers and microbolometers. In this paper we present simple and low-temperature growth of amorphous vanadium oxide films by reactive electron beam evaporation of vanadium metal in $\sim 10^{-4}$ mBar oxygen atmosphere. The temperature coefficient of the resistivity (TCR) of the films is weakly sensitive to substrate material and temperature and could be tuned by oxygen pressure in the growth chamber up to -2.2\% /K. The resistivity value is stable for months. It depends on the substrate material and substrate temperature during the evaporation. Simplicity and controllability of the method should lead to various laboratory and industrial applications.

Materials Science,Applied Physics,Instrumentation and Detectors
Thermal oxidation-grown vanadium dioxide thin films on FTO (Fluorine-doped tin oxide) substrates

Guoxiang Tong,Yi Li,Feng Wang,Yize Huang,Baoying Fang,Xiaohua Wang,Huiqun Zhu,Liu Li,Yujian Shen,Qiuxin Zheng,Qian Liang,Meng Yan,Yuan Qin,Jie Ding

DOI: https://doi.org/10.1016/j.infrared.2013.07.003

IF: 2.997

2013-01-01

Infrared Physics & Technology

Abstract:•(110) -oriented VO2 thin films were obtained on FTO substrate by DC magnetron sputtering.•VO2 thin films have a low phase transition temperature (∼51°C).•The NIR modulation efficiency is markedly affected (transmittance, ∼40%).•The properties were studied upon XRD and SEM.

Low Temperature Growth of VO2 Film and Giant Modulation to Terahertz Transmission

VO2 Low Temperature Deposition and Terahertz Transmission Modulation

Terahertz Transmission Properties of Vanadium Dioxide Films Deposited on Gold Grating Structure with Different Periods

Ultrafast and Broadband Terahertz Switching Based on Photo-Induced Phase Transition in Vanadium Dioxide Films

For Progress in Natural Science: Materials International Investigations of Structural Phase Transformation and THz Properties Across Metal–insulator Transition in VO2/Al2O3 Epitaxial Films

THz Modulation Performance of VO2 Film Grown on Al2O3/Si Substrate

Semiconductor-metal transition in thin VO2 films grown by ozone based atomic layer deposition

Low Temperature Fabrication of High-Performance VO2 Film Via Embedding Low Vanadium Buffer Layer

Broadband THz modulation characteristics of vanadium dioxide thin film prepared on glass substrate

Electrically-driven metal-insulator transition of VO2 thin films in a nanoscale metal-oxide-metal device structure

Low pressure thermal annealed fabrication of VO2 on glass with excellent optical properties

Dynamic Manipulation of THz Waves Enabled by Phase-Transition VO2 Thin Film

Optimization of Metal-to-insulator Phase Transition Properties in Polycrystalline VO2 Films for Terahertz Modulation Applications by Doping

VO$_2$ films grown on TiO$_2$ sub-layer: influence of thickness on structural, electrical and optical properties

Fabrication and Electrical Properties of Pure VO2 Phase Films

Synthesis of Vanadium Dioxide Thin Films on Conducting Oxides and Metal–insulator Transition Characteristics

Temperature-dependent Optical Characterization of VO2 Thin Film Prepared from Furnace Oxidation Method

Growth of Vanadium Dioxide Thin Films on Pt Metal Film and the Electrically-Driven Metal-Insulator Transition Characteristics of Them

Growth of ultra thin vanadium dioxide thin films using magnetron sputtering

Amorphous VO$_x$ films with high temperature coefficient of the resistivity grown by reactive e-beam evaporation of V metal

Thermal oxidation-grown vanadium dioxide thin films on FTO (Fluorine-doped tin oxide) substrates