Broadband THz modulation characteristics of vanadium dioxide thin film prepared on glass substrate

Chen Chen,Zhenfei Luo,Yadong Jiang,Zhiming Wu,Qinglong Meng,Cunbang Yang,Xun Zhou,Bin Zhang
DOI: https://doi.org/10.11884/HPLPB201628.023104
2016-01-01
Abstract:For the applications of vanadium dioxide (VO 2 )thin film in terahertz tunable functional devices,the vanadium dioxide VO 2 thin film was prepared by magnetron sputtering technique on K9 glass substrate,and the crystal structure was char-acterized by X-ray diffraction (XRD).Spectral characteristics and their variations of terahertz (THz)reflection and transmission signal passing through the sample at different temperatures were studied by the THz time domain spectroscopy system (THz-TDS)equipped with heating device.The experimental results indicated that the semiconductor-metal transition of VO 2 thin film occurred with the increase of the heating temperature and showed excellent modulation to the broadband THz wave.The modula-tion depth was dependent on the THz frequency.The THz wave amplitude modulation depth of reflection power and transmission showed remarkable fluctuation in the band of 0.3-0.5 THz.The transmittance of THz wave was larger in the low frequency band than that in the high frequency band,and the modulation depth varied in the range of 35%-65%.The thin film was prepared sim-ply and had high quality,which can be applied to THz modulator functions such as devices and switches.
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