Broadband and High Modulation-Depth THz Modulator Using Low Bias Controlled VO_2-integrated Metasurface

Gaochao Zhou,Penghui Dai,Jingbo Wu,Biaobing Jin,Qiye Wen,Guanghao Zhu,Ze Shen,Caihong Zhang,Lin Kang,Weiwei Xu,Jian Chen,Peiheng Wu
DOI: https://doi.org/10.1364/oe.25.017322
IF: 3.8
2017-01-01
Optics Express
Abstract:An active vanadium dioxide integrated metasurface offering broadband transmitted terahertz wave modulation with large modulation-depth under electrical control is demonstrated. The device consists of metal bias-lines arranged with grid-structure patterned vanadium dioxide (VO2) film on sapphire substrate. Amplitude transmission is continuously tuned from more than 78% to 28% or lower in the frequency range from 0.3 THz to 1.0 THz, by means of electrical bias at temperature of 68 °C. The physical mechanism underlying the device's electrical tunability is investigated and found to be attributed to the ohmic heating. The developed device possessing over 87% modulation depth with 0.7 THz frequency band is expected to have many potential applications in THz regime such as tunable THz attenuator.
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