Electrically-driven metal-insulator transition of VO2 thin films in a nanoscale metal-oxide-metal device structure

Dong-Hong Qiu,Qi-Ye Wen,Qing-Hui Yang,Zhi Chen
DOI: https://doi.org/10.1109/UCMMT.2013.6641563
2013-01-01
Abstract:We report the growth of vanadium dioxide (VO2) films on metal electrode with a thin SiO2 buffer and the fabrication of nanoscale metal-oxide-metal junction. The thermal-induced metal-insulator transition with a change of resistance of 2 orders of magnitude is observed and the threshold voltage is as low as 1.6V.
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