Abstract:A study has been made of the electrical behaviour of In-doped metal organic vapour phase epitaxy (MOVPE) layers of Hg(1-x)Cd(x)Te grown by the interdiffused multilayer process (imp) in order to establish the factors needed to obtain uniform extrinsic n-type layers with high electrical activity and mobility. Layers with x between 0.2 and 0.3 were grown on (100) CdTe and CdTeSe at 360-degrees-C using di-isopropyltelluride (DIPT) and doped with trimethylindium (TMIn) in two ways, depending on In concentration, [In]. For [In] > 1 x 10(17) cm-3 layers were doped with TMIn on the CdTe part of the imp cycle while for [In] in the range 1 X 10(15) to l X 10(17) cm-3 the TMIn memory of the growth system was used, resulting in doping on the HgTe part of the imp cycle because of a greater efficiency of incorporation. In profiles, which were determined by secondary-ion mass spectrometry (SIMS), are shown to depend on doping process due to TMIn partial pressure variations from adsorption effects. The layers, which were capped with CdTe to prevent inadvertent post-growth annealing from affecting the electrical activity of the In, were p type when undoped. On doping, as-grown layers become n type at 77 K at [In] approximately 1 x 10(16) cm-3 due to the concentration of donors exceeding the background concentration of Hg acceptor vacancies. The percentage of In electrically active is 33 % at [In] less-than-or-equal-to 2 x 10(18) cm-3 and 15-20 % at higher [In]. The 77 K Hall mobilities of layers, both p and n type, are low when [In] > 1 x 10(16) cm-3, probably because of high levels of compensation. Low temperature annealing to remove Hg vacancies, both ex situ and in situ, significantly improves the electrical properties. Electrical activity of the In increases to 100 % over the [In] range 1 x 10(15) to 2 x 10(18) cm-3 and to 40 % at higher concentrations. 77 K Hall mobility of the n-type layers increases and shows a dependence on carrier concentration and x consistent with lightly compensated material. Results are in agreement with In doping introducing autocompensating centres which anneal out on a low-temperature Hg-rich anneal.

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Disclosing the carrier distributions in ion-implanted HgCdTe p–n junctions with scanning capacitance microscopy

Minority Carrier Mobility Measurement in HgCdTe with Light-Modulated Hall Effect

Optical and Electronic Characterization on HgCdTe Materials

Terahertz photoconductivity of double acceptors in narrow gap HgCdTe epitaxial films grown by molecular beam epitaxy on GaAs(013) and Si(013) substrates

Evaluation Of Densities And Mobilities For Heavy And Light Holes In P-Type Hg1-Xcdx Molecular Beam Epitaxy Films From Magnetic-Field-Dependent Hall Data

Study Of Impurity States In P-Type Hg1-Xcdxte Using Far-Infrared Spectroscopy

Electronic Transport of the Manganite-Based Heterojunction with High Carrier Concentrations

Study on electric properties of boron ion implantation of MBE grown HgCdTe

Control of the Electrical Properties of In-doped HgCdTe Grown by MOVPE for IR Detector Applications

High Carrier Mobility in HgTe Quantum Dot Solids Improves Mid-IR Photodetectors

Mercury-probe measurement of electron mobility in β-Ga2O3 using junction moderated dielectric relaxation

Study of nonmonotonic electron mobility due to influence of asymmetric structure parameters in pseudomorphic heterojunction field effect transistors

Magnetoresistance of high mobility HgTe quantum dot films with controlled charging

A Study of Electrical Characteristics for Boron Implantation of Mbe Grown Hgcdte

High Hole Mobility Si/Si1-Xgex/Si Heterostructure

A Novel Junction Profile Measurement In Hgcdte Epilayer By Laser Beam Induced Current

Low-field Mobility and High-field Velocity of Charge Carriers in InGaAs/InP High-electron-mobility Transistors

Infrared ellipsometry study of the confined electrons in a high-mobility $γ$-Al$_2$O$_3$/SrTiO$_3$ heterostructure

Revealing of the transition from n- to p-type conduction of InN:Mg by photoconductivity effect measurement

In Doping on MBE Grown HgCdTe