Abstract:<math> β</math>-Gallium oxide (<math> β - G a 2 O 3</math>) is an emerging wide bandgap semiconductor with potential applications in power and RF electronic systems. Previous theoretical calculation on a two-dimensional electron gas (2DEG) in <math> β - ( A l x G a 1 − x ) 2 O 3 / G a 2 O 3</math> heterostructures, taking only polar optical and remote impurity scattering into account, shows improved mobility compared to bulk <math> β - G a 2 O 3</math>. However, the experimental results in 2DEGs have not achieved the predicted mobility values. In this work, we perform more comprehensive calculations to study the low field 2DEG transport properties in the <math> β - ( A l x G a 1 − x ) 2 O 3 / G a 2 O 3</math> heterostructures. A self-consistent Poisson–Schrödinger simulation of a heterostructure is used to obtain the sub-band energies and the wavefunctions in the quantum well. The phonon dispersion is calculated based on the ab initio methods under the density functional theory and density functional perturbation theory frameworks. The different scatterings that are included in the calculation are due to phonons (polar and non-polar), remote impurities, the alloy disorder, and interface roughness. We include a full dynamic screening of polar optical phonons. We report the temperature dependent low-field electron mobility as a function of 2DEG density. The overall mobility is found to be increasing with electron density with an exception at low density where the antiscreening of LO phonons reduces mobility. The effect of spacer thickness, aluminum fraction, and roughness parameters on mobility is shown to be critically important. The effect of the confinement direction on 2DEG mobility is found to be small and comparable to bulk. A comparison of calculated mobility values with experimentally reported data shows a good agreement.

Infrared ellipsometry study of the confined electrons in a high-mobility $γ$-Al$_2$O$_3$/SrTiO$_3$ heterostructure

Infrared ellipsometry study of the photo-generated charge carriers at the (001) and (110) surfaces of SrTiO$_3$ crystals and the interface of corresponding LaAlO$_3$/SrTiO$_3$ heterostructures

Mapping the Spatial Distribution of Charge Carriers in LaAlO3/SrTiO3 Heterostructures

High-mobility two-dimensional electron gas in $γ$-Al$_2$O$_3$/SrTiO$_3$ heterostructures

Unravelling Oxygen-Vacancy-induced Electron Transfer at SrTiO3-based Heterointerfaces by Transport Measurement During Growth

Enhancing electron mobility at the LaAlO₃ /SrTiO₃ interface by surface control.

Enhancing Electron Mobility at the LaAlO3/SrTiO3 Interface by Surface Control

Photoelectric properties of two-dimensional electron gas at the (Ga0.5Al0.5)2O3/SrTiO3 heterointerfaces

A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface

Localization of Two-dimensional Electron Gas in LaAlO3/SrTiO3 Heterostructures

Tracing the formation of oxygen vacancies at the conductive LaAlO3/SrTiO3 interface via photoemission

Phonon scattering limited mobility in the representative cubic perovskite semiconductors SrGeO$_3$, BaSnO$_3$ and SrTiO$_3$

Tracing the Formation of Oxygen Vacancies at the Conductive LaAlO<sub>3</sub>/SrTiO<sub>3</sub> Interface Via Photoemission

Mobility Limiting Scattering Mechanisms in Nitride-Based Two-Dimensional Heterostructures with the Ingan Channel

Coexistence of high electron-mobility, unpaired spins, and superconductivity at high carrier density SrTiO$_3$-based interfaces

High-mobility Electron Gas in Sr2TiO4/SrTiO3 Heterostructure Engineered by Vertical Ruddlesden–Popper Faults

Low field transport calculation of 2-dimensional electron gas in β - ( A l x G a 1 − x ) 2 O 3 / G a 2 O 3 heterostructures

Origin of the two-dimensional electron gas at LaAlO3/SrTiO3 interfaces: The role of oxygen vacancies and electronic reconstruction

Thermal and electrostatic tuning of surface phonon-polaritons in LaAlO3/SrTiO3 heterostructures

Mid infrared near-field fingerprint spectroscopy of the 2D electron gas in LaAlO$_3$/SrTiO$_3$ at low temperatures

Rewritable High-Mobility Electrons in Oxide Heterostructure of Layered Perovskite/Perovskite