A Novel Junction Profile Measurement In Hgcdte Epilayer By Laser Beam Induced Current

Li Haibin,Xu Jingjie,Zhou Songmin,Lin Chun,He Li
DOI: https://doi.org/10.1117/12.900799
2011-01-01
Abstract:A novel, sample junction profile measurement in HgCdTe epilayer is investigated. This measurement is used a scanning laser microscope to obtain the laser beam induced current (LBIC) signals of photosensitive pixel arrays on a long beveled HgCdTe epilayer, and the junction profile is extracted from the LBIC data. In this work, junctions are fabricated by B+ implantation, and the beveled surface which is about 10mm long and several micrometers deep is formed by wet-etching way. Because of different epilayer thicknesses on the HgCdTe beveled surface, some n regions of pixels are totally removed at the deeper side, and the others have residual n regions at the shallower side. Therefore the very position where the LBIC signal begins to vanish would point out the boundary between junction region and non-junction region, and then the junction depth is extracted from the boundary data. The lateral sizes of junction at different depths are determined by the peak-to-peak space in LBIC signals. The junction profile of both Hg vacancies doped and Arsenic doped HgCdTe was measured in this work. The junction depth is about 1.29 mu m in Hg vacancy doped HgCdTe and a significant lateral expansion was observed at low temperature. The junction depth is about 5.48 mu m in arsenic doped HgCdTe. Moreover, the new technique is applicable to either HgCdTe or other materials.
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