Abstract:We demonstrate two distinct experimental processes involving the large-area growth of ordered and disordered silicon nanowire arrays (SiNWs) on a p-type silicon substrate using the metal-assisted chemical etching method. The two processes are based on the etching of monocrystalline silicon wafers by randomly distributed Ag films and ultra-thin Au films with ordered nano-mesh arrays, respectively, wherein the growth of SiNWs is implemented using a specific proportion of a HF-containing solution at room temperature. In this study, the microstructural change mechanisms for the two morphologically different arrays before and after annealing were investigated using Raman spectra. The effects of various mechanisms on the observed Raman scattering peak's deviation from symmetry, redshift and broadening were analyzed. The evolution of the unstable amorphous structures of nanoscale materials during the high-temperature annealing process was observed via high-resolution scanning electron microscope (SEM) observations. The scattering peak parameters determined from the Raman spectra led to conclusions concerning the various mechanisms by which high-temperature annealing influences the microstructures of the two morphologically different SiNWs fabricated on the p-type silicon substrate. Therefore, the deviation of SiNWs from the monocrystalline silicon scattering peak at 520.05 cm−1 when changing the diameter of the nanowire columns was calculated to further analyze the effect of thermal annealing on Raman characteristics.

Self-diffuse Nanostructures on Silicon Surfaces Through Rapid Annealing at High Temperatures

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Thermal Nitridation Kinetics of Silicon Wafers in Nitrogen Atmosphere During Annealing

Crystallization and Disappearance of Defects of the Annealed Silicon Nanowires

Crystallization and Raman Shift of Array-Orderly Silicon Nanowires after Annealing at High Temperature

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Diamond Nanocrystals and Amorphous SiOx Nanowires Formed by Rapid Thermal Annealing of Carbon Film

Effect Of Nitrogen Doping On The Dissolution Of Oxygen Precipitates In Czochralski Silicon During Rapid Thermal Annealing

Rapid thermal annealing and crystallization mechanisms study of silicon nanocrystal in silicon carbide matrix

Ni Silicide and Ni Germanosilicide Self-Aligned Process for 65nm and Beyond CMOS Technology by 2-Step Rapid Thermal Annealing

Effect of High-Temperature Annealing on Raman Characteristics of Silicon Nanowire Arrays

Positron annihilation spectroscopy of the interface between nanocrystalline Si and SiO2

Sulfide-assisted Growth of Silicon Nano-Wires by Thermal Evaporation of Sulfur Powders

Enhanced Oxygen Diffusion in Czochralski Silicon at 450–650 °C

Annealing effect on structures and luminescence of amorphous SiN films

High-temperature nitrogen annealing induced bonding states and photoluminescence changes in inductively coupled plasma torch synthesized silicon nanostructures

The influence of annealing temperature on the synthesis of silicon quantum dots embedded in hydrogenated amorphous Si-rich silicon carbide matrix

Patterned growth of self-assembled silicon nanostructures by ion implantation and electron beam annealing

High temperature annealing of hydrogenated amorphous silicon carbide thin films

Controllable Si oxidation mediated by annealing temperature and atmosphere

Rapid thermal annealing of Si paste film and pn-junction formation