Abstract:Resistive random access memory (RRAM) exhibits advantages, such as high speed, simple structure, and good compatibility with CMOS technology. However, an additional forming step is usually inevitable, which requires cell-by-cell verification and can be very timeconsuming. This article proposes a novel dual-step page forming method that can realize low-current forming and improve a bit error rate (BER). Based on this technique and corresponding circuit, a no-verify page-forming scheme is proposed and can achieve a fast-forming speed of 7.56 Mb/s. Moreover, the impact of parameters, such as forming voltage and forming time in the forming process on the BER, is discussed. In addition, to achieve lower BER and better reliability, a two-transistor-two-resistor (2T2R) cell structure is adopted, and both digital verify (DV) and analog verify (AV) methods are proposed. The proposed page-forming and two verify methods are experimentally validated on a 1-MB RRAM chip. An ultralow BER of 10(-5)/10(-6) (DV/AV) without any error correction is achieved. Excellent endurance (> 107 cycles for both AV and DV) and retention (> 10 years at 25 ?C for AV) are also demonstrated on the chip level. Overall, this work demonstrates a useful strategy to design high reliability RRAM chip with excellent memory performance.

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