Abstract:ZnO/Cu/ZnO trilayer films sandwiched between Cu and Pt electrodes were prepared for nonvolatile resistive memory applications. These structures show resistance switching under electrical bias both before and after a rapid thermal annealing (RTA) treatment, while it is found that the resistive switching effects in the two cases exhibit distinct characteristics. Compared with the as-fabricated device, the memory cell after RTA demonstrates remarkable device parameter improvements including lower threshold voltages, lower write current, and higher R-off/R-on ratio. A high-voltage forming process is avoided in the annealed device as well. Furthermore, the RTA treatment has triggered a switching mechanism transition from a carrier trapping/detrapping type to an electrochemical-redox-reaction-controlled conductive filament formation/rupture process, as indicated by different features in current-voltage characteristics. Both scanning electron microscopy observations and Auger electron spectroscopy depth profiles reveal that the Cu charge trapping layer in ZnO/Cu/ZnO disperses uniformly into the storage medium after RTA, while x-ray diffraction and x-ray photoelectron spectroscopy analyses demonstrate that the Cu atoms have lost electrons to become Cu2+ ions after dispersion. The above experimental facts indicate that the altered status of Cu in the ZnO/Cu/ZnO trilayer films during RTA treatment should be responsible for the switching mechanism transition. This study is envisioned to open the door for understanding the interrelation between different mechanisms that currently exist in the field of resistive memories.

Effect of Low Constant Current Stress Treatment on the Performance of the Cu/Zro2/Pt Resistive Switching Device

Improvement of resistive switching characteristics in ZrO2 film by embedding a thin TiOx layer.

On The Resistive Switching Mechanisms Of Cu/Zro2:Cu/Pt

Stable Nonpolar Resistive Switching Characteristics in Cu/Cu-dispersed ZrO2/Pt Memory Devices

Improved Resistive Switching Uniformity in $ \hbox{cu/hfo}_{2}/\hbox{pt}$ Devices by Using Current Sweeping Mode

Resistive Switching Properties and Failure Behaviors of (pt, Cu)/Amorphous ZrO2/Pt Sandwich Structures

Switching Mechanism Transition Induced by Annealing Treatment in Nonvolatile Cu/Zno/Cu/Zno/Pt Resistive Memory: from Carrier Trapping/Detrapping to Electrochemical Metallization

Thermal stable and low current complementary resistive switch with limited Cu source in amorphous carbon

Excellent Resistive Switching Characteristics of Cu Doped ZrO2 and Its 64 Bit Cross-Point Integration

Low temperature improvement method on Zn:SiOx resistive random access memory devices

The Effect of Current Compliance on the Resistive Switching Behaviors in TiN/ZrO<sub>2</sub>/Pt Memory Device

Resistive switching mechanism of Ag/ZrO 2 :Cu/Pt memory cell

Controllable volatile to nonvolatile resistive switching conversion and conductive filaments engineering in Cu/ZrO2/Pt devices

Investigation of One-Dimensional Thickness Scaling on $ \hbox{Cu/HfO}_{x}/\hbox{Pt}$ Resistive Switching Device Performance

Improvement Of Resistive Switching Properties In Zro2-Based Reram With Implanted Ti Ions

Bipolar Resistive Switching With Self-Rectifying Effects In Al/Zno/Si Structure

Nonpolar Nonvolatile Resistive Switching In Cu Doped Zro2

Resistive switching mechanism of Cu doped ZrO2-based RRAM

Improving the Electrical Performance of Resistive Switching Memory Using Doping Technology

Stability and Its Mechanism in Ag/CoOx/Ag Interface-Type Resistive Switching Device.

Effect of aging treatment on the electrical sliding wear behavior of Cu–Cr–Zr alloy